High-quality ZnO films grown by atmospheric pressure metal– organic chemical vapor deposition

Properties of ZnO films grown on (0001) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

“…[11,12] in detail was used for the growth of the ZnO films using 6 N-purity DEZn as Zn precursor, deionized water (H 2 O) and N 2 O as O precursors, and 7 Npurity nitrogen as the carrier gas. Typical growth conditions were as follows: The reactor-chamber pressure was 760 Torr.…”

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

“…[141][142][143][144][145][146][147][148][149][150][151][152][153] as well as materials for oxide electronics in general, [154] superconducting oxides, [155] buffer layers for superconducting oxide films, [156,157] manganates, [158] oxide gate electrode materials, [159] ferroelectrics, [160][161][162][163][164] the half-metallic oxide ferromagnet CrO 2 , [165][166][167][168][169][170][171][172][173][174][175][176][177][178][179][180][181][182][183] and ZnO. [184][185][186][187][188][189]…”

Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer

“…5. The main PL peak at about 3.26 eV is due to the free exciton emission in ZnO and a low energy shoulder is attributable to the emission related to point defects [2]. The emission efficiency is reported to be dependent on the crystalline degree of ZnO thin films [17].…”

“…ZnO has rapidly emerged as a promising optoelectronic material because of its potential usefulness in optoelectronic devices [1,2]. For many applications, ZnO epitaxial thin films with high crystalline quality are highly desirable [3].…”