2010
DOI: 10.1016/j.jallcom.2010.08.037
|View full text |Cite
|
Sign up to set email alerts
|

Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
16
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
8
1

Relationship

3
6

Authors

Journals

citations
Cited by 28 publications
(16 citation statements)
references
References 20 publications
(27 reference statements)
0
16
0
Order By: Relevance
“…There are studies that report the same dominant behavior of (110) preferred orientation of the ZnO-based thin films deposited on such substrates [41,42,43], but also some that presented (002) dominant orientation [44,45]. The preferential growth mode is influenced by both substrate cleaning process and deposition parameters.…”
Section: Resultsmentioning
confidence: 95%
“…There are studies that report the same dominant behavior of (110) preferred orientation of the ZnO-based thin films deposited on such substrates [41,42,43], but also some that presented (002) dominant orientation [44,45]. The preferential growth mode is influenced by both substrate cleaning process and deposition parameters.…”
Section: Resultsmentioning
confidence: 95%
“…The XRD results show that a preferred-(1 1 0) ZnO/STO thin film can only be grown at a sufficiently high substrate temperature. A ZnO thin film with a preferred-(1 1 0) orientation has also been grown by sputtering deposition on STO at a high temperature [13]. Fig.…”
Section: Methodsmentioning
confidence: 99%
“…As a major II-VI group semiconductor, zinc oxide (ZnO) has a wide band gap of approximately 3.3 eV at room temperature [4]. ZnO nanostructures can be prepared on a large scale by using a facile hydrothermal method [5], and ZnO nanostructures with various morphologies have been extensively studied for use in gas sensors [6,7].…”
Section: Introductionmentioning
confidence: 99%