Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

Pulzara-Mora, A.; Cruz‐Hernández, E.; Rojas-Ramírez, J. S.; Méndez-García, V.H.; López‐López, M.

doi:10.1016/j.mejo.2008.01.064

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…InAs self-assembled quantum dots (SAQDs) were grown by Molecular Beam Epitaxy (MBE) through the Stranski-Krastanow process. QDs are formed by depositing a few InAs monolayers on an InAs wetting layer with 2D growth, which copies the network of the GaAs (1 0 0) substrate, and then, it is stressed up to a critical thickness (~1.7 monolayers -ML-) to form three-dimensional quantum structures (sample Q.dots90) [36], as shown in the AFM image in Figure 1a). In Figure 1b) it is observed the histogram with the number of dots in a selected area (red in Figure 1a) in relation with their height in Å. GaAs is an undoped sample from a commercial wafer with an orientation (1 0 0) ± 0.1°, acquired from Wafer Technology.…”

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots

Trujillo

Barragán

Calderón

et al. 2017

Superficies y Vacio

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GaAs buffer layer in InAs/GaAs quantum dots (QDs) was investigated by Photoreflectance (PR) technique at 300 K. PR spectra obtained were compared with commercial GaAs sample PR spectra, and they were analyzed by using the derivative Lorentzian functions as proposed by Aspnes in the middle field regimen. PR spectra in InAs/GaAs QDs sample was attributed to the photoreflectance response in the GaAs buffer layer. Band bending energies were calculated for laser intensities from 1 mW to 21 mW. The photoreflectance comparative study in the samples was realized considering the difference in the parameters: electric field on the surface, broadening parameter, energy gained by photoexcited carriers due to the electric field applied, frequency of light and heavy holes and band bending energy values. The results suggest that the presence of InAs quantum dots increases the light and heavy holes frequencies and the band bending energy values; and decreases the electric field on the surface, the broadening parameter and the energy gained by photoexcited carriers. We found that InAs QDs presence modifies the surface electrical field around one order of magnitude in the GaAs buffer layer and this behavior can be attributed to surface passivation.

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Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots

Trujillo

Barragán

Calderón

et al. 2017

Superficies y Vacio

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“…Various research groups have worked on the optimization of appropriate conditions for controlling QD self-organization, [1][2][3] mostly on (100)-oriented substrates. Yet, owing to the stochastic nature of adatom nucleation, the spatial ordering of QDs is still extremely challenging.…”

Section: Introductionmentioning

confidence: 99%

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Eugenio-López

Mercado-Ornelas

Pallavi

et al. 2018

Jpn. J. Appl. Phys.

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The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As ) and the cation/anion terminated surface, i.e., A-or B-type GaAs(631). The self-organization of QDs occurs for both surface types along ½ 113, while the QD shape and size distribution were found to be different for the self-assembly on the A-and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.

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