Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

“…All the measured amplitudes of the cosine variation of ω S and ω L , show a well aligned InAs layer-GaAs substrate. This tilt free is due to the In rich environment created by low growth temperature (450 • C) and low V/III ratio (18) [25]. The improvement of the crystalline quality observed in InAs layers grown on 2 • misoriented substrates and the vanishing of the mosaic structure in InAs layers grown on 10 • misoriented substrate is attributed to the presence of Bi nanodots inlayed in InAs film.…”

“…This may be the effect of surface steps in decreasing compressive strain. In a previous work [25], we have shown that the thinnest InAs layer (25 nm), grown on exactly oriented GaAs substrate, presents a tilt amplitude of about 1.61 • with respect to [0 0 1] direction. Due to the significant difference between InAs and GaAs thermal expansion coefficients, residual strain takes place during cooling of InAs layer [26] and becomes more remarkable on thinner layers.…”

“…In order to investigate these effects, we first compared the surface morphology of InAs layers grown with and without TMBi flow. AFM images of InAs samples grown on different misoriented (1 0 0) GaAs substrates without TMBi flow showing flat surfaces are presented elsewhere [25]. Fig.…”