Metal Organic Vapor‐Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrate
Koki Hombu,
Kenshiro Hikita,
Takeshi Fujisawa
et al.
Abstract:Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber‐optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photolumines… Show more
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