Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

Vega-Macotela, L. G.; Torchynska, T. V.; Polupan, Georgiy

doi:10.1007/s10854-017-6536-z

Cited by 5 publications

(1 citation statement)

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“…Numerical simulations of HR-XRD scans were provided with the method proposed in. 31,45,46 It was previously shown that HR-XRD rocking curves of QD structures can include two sets of periodicities with the same multilayer period P, if the QDs have the significant sizes. 45 One set of periodicities is related to the area of QW layers that do not include the QDs.…”

Section: Modelingmentioning

confidence: 99%

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions

Torchynska¹,

Tamayo²,

Polupan³

et al. 2022

ECS J. Solid State Sci. Technol.

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The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy, and high-resolution X ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10-500K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.

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