Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

Abstract

The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As ) and the cation/anion terminated surface, i.e., A-or B-type GaAs(631). The self-organization of QDs occurs for both surface types along ½ 113, while the QD shape and size distribution were found to be different for the self-assembly on the A-and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.