Structural and dielectric properties of ZrTiO4 and Zr0.8Sn0.2TiO4 deposited by pulsed laser deposition

Viticoli, M.; Padeletti, G.; Kačiulis, S.; Ingo, G. M.; Pandolfi, L.; Zaldo, C.

doi:10.1016/j.mseb.2004.12.047

Cited by 16 publications

(4 citation statements)

References 12 publications

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“…In fact, as the annealing temperature is below 700 °C, the ZTO remains amorphous since no discernable peaks can be observed which means that 700 °C is the minimum thermal budget to crystallize ZTO from amorphous to orthorhombic phase. The temperature-dependent crystallization behavior in this work is consistent with others reported in the literature21, although some researches have shown crystallization temperature below 700 °C22. It is worth mentioning that TiO 2 and ZrO 2 can be respectively crystallized in anatase or monoclinic phase below 600 °C23.…”

Section: Resultssupporting

confidence: 91%

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Shen

Chen

et al. 2017

Sci Rep

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Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

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Section: Resultssupporting

confidence: 91%

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Shen

Chen

et al. 2017

Sci Rep

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“…The dielectric constant value of ZrTiO4 shows more value (50) whereas ZrO2 shows lower value (40). The similar results are reported by Viticoli et al [17] and also Shanthala et al [18]. The variation of tanδ with respect to frequency is as shown in the Fig.…”

Section: ɛʹ = ɛ ̥supporting

confidence: 90%

A Comparable Study of Structural, Dielectric and Humidity Sensing Properties of Solution Combustion Synthesized ZrO2 and ZrTiO4 Nano Powders

Madhusudhana¹,

Shobhadevi²,

Nagabhushana³

et al. 2018

JNST

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Simple and cost-effective solution combustion method is used to synthesize nano powders of ZrO2 and ZrTiO4. The structural and morphological analysis was done by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Results revealing the phase confirmation and structure of synthesized samples. Dielectric properties of the synthesized ZrTiO4 powder dominates the synthesized ZrO2 having superior dielectric constant (ɛʹ = 50), Low dielectric loss and enhanced conductivity (σac = 2.75 x 10 -4 Scm -1 ) at room temperature. The humidity sensing properties for ZrTiO4 shows good linear behavior compare to ZrO2.

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“…Fig-5 shows the dielectric properties of the ZrTiO4 thin films at different sputtering currents of 0.5 A to 2.5 A. The dielectric constant and loss of the films were measured at frequencies in the range of 100 Hz-10 MHz and it is observed that as the sputtering current increases, the high dielectric constant width decreases from 74.3 to 43.3 for ZrTiO4 thin films which were higher more than which other research because of higher energy [4,12,13]. …”

Section: Properties Of Zrtio4 Thin Filmsmentioning

confidence: 91%

Structure and Properties of Zrtio4 Thin Films Prepared by Reactive Magnetron Co-Sputtering Without Heating

Thammapreecha

Treetong

Putasaeng

et al. 2017

International Journal of Natural Sciences Research

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Article HistoryZrTiO4 thin films were deposited by reactive dc magnetron co-sputtering method without heating. The crystal structure, surface morphology, thickness, optical and dielectric properties of the thin films were investigated. At sputtering currents above 2.0 A without heating ZrTiO4 thin film was crystallization of the orthorhombic phase (111). The values of refractive index were ranged between 2.01 and 2.23 (at 650 nm). The optical packing density values were ranged between 0.85 and 0.96. From this study, it was observed that the refractive index values were strongly dependent on packing densities. The high dielectric constant width decreases from 74.3 to 43.3 when sputtering current increases, which is higher than other research. Contribution/Originality:This study is one of very few studies which have a high degree of insulation of 43.3, which is higher than other research due to ZrTiO4 thin films were deposited by reactive dc magnetron cosputtering system at Zr and Ti sputtering current of 2.5 A without heating

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Structural and dielectric properties of ZrTiO4 and Zr0.8Sn0.2TiO4 deposited by pulsed laser deposition

Cited by 16 publications

References 12 publications

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

A Comparable Study of Structural, Dielectric and Humidity Sensing Properties of Solution Combustion Synthesized ZrO2 and ZrTiO4 Nano Powders

Structure and Properties of Zrtio4 Thin Films Prepared by Reactive Magnetron Co-Sputtering Without Heating

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