Structure and Properties of Zrtio4 Thin Films Prepared by Reactive Magnetron Co-Sputtering Without Heating

Abstract

Article HistoryZrTiO4 thin films were deposited by reactive dc magnetron co-sputtering method without heating. The crystal structure, surface morphology, thickness, optical and dielectric properties of the thin films were investigated. At sputtering currents above 2.0 A without heating ZrTiO4 thin film was crystallization of the orthorhombic phase (111). The values of refractive index were ranged between 2.01 and 2.23 (at 650 nm). The optical packing density values were ranged between 0.85 and 0.96. From this study, it was observed that the refractive index values were strongly dependent on packing densities. The high dielectric constant width decreases from 74.3 to 43.3 when sputtering current increases, which is higher than other research. Contribution/Originality:This study is one of very few studies which have a high degree of insulation of 43.3, which is higher than other research due to ZrTiO4 thin films were deposited by reactive dc magnetron cosputtering system at Zr and Ti sputtering current of 2.5 A without heating

Dielectric Properties of ZrTiO4 Thin Films Prepared by Reactive DC Magnetron Co-sputtering

“…1a shows the XRD pattern of the ZrTiO 4 thin films deposited on Si (100) wafers at different sputtering currents of 0.5 and 1.5 A, which exhibits an orthorhombic crystal structure (JCPDS 34-0415) and possesses-PbO 2 -type structure belonging to the Pbcn space group. The ZrTiO 4 thin films were amorphous structureat sputtering currents of 0.5 A and 1.5 A without heating [8] and show preferred orientation in (111) direction at sputtering currents of 1.5 A with heat 600 °C. The other observed XRD patterns are (011), (020), (200), (120), (201), (121), (211), (220), (022), (202), (122), (311), (222) and (320) peaks.…”

“…Table 2 shows the dielectric properties of the ZrTiO 4 thin films at different sputtering currents of 0.5 and 1.5 A. And 1 MHz dielectric properties of ZrTiO 4 thin films at sputtering currents, it is observed that as the sputtering current increases, the high dielectric constant width decreases from 74.3 to 52.1 for ZrTiO 4 thin films without heating [8] which are higher more than which had researched because of higher energy. Moreover ZrTiO 4 thin films with heat 600 °C are valuable high dielectric constant has increased to 129.2 [7].…”