Article HistoryZrTiO4 thin films were deposited by reactive dc magnetron co-sputtering method without heating. The crystal structure, surface morphology, thickness, optical and dielectric properties of the thin films were investigated. At sputtering currents above 2.0 A without heating ZrTiO4 thin film was crystallization of the orthorhombic phase (111). The values of refractive index were ranged between 2.01 and 2.23 (at 650 nm). The optical packing density values were ranged between 0.85 and 0.96. From this study, it was observed that the refractive index values were strongly dependent on packing densities. The high dielectric constant width decreases from 74.3 to 43.3 when sputtering current increases, which is higher than other research. Contribution/Originality:This study is one of very few studies which have a high degree of insulation of 43.3, which is higher than other research due to ZrTiO4 thin films were deposited by reactive dc magnetron cosputtering system at Zr and Ti sputtering current of 2.5 A without heating

ZrTiO 4 is a small ceramic constituent material which has very good thermal and electrical properties. ZrTiO 4 thin films were deposited by reactive dc magnetron co-sputtering method. The crystal structure, surface morphology, thickness and dielectric properties were characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), FE-SEM (field emission scanning electron microscope), and precision impedance analyzer respectively. These films were crystallization of the orthorhombic phase (111) of ZrTiO 4. The microstructure of well-crystallized ZrTiO 4 thin films had the surface morphology was smooth with 1.695 nmrms roughness. The high dielectric constant width decreases from 129.2 to 110.6 when sputtering current increases which are higher more than that had researched because of higher energy but impedance; |Z| increases from 1.97 to 2.47 kΩ. These results are consistent with the RMS roughness results, which are the RMS roughness decrease with increasing sputtering current.