Dielectric Properties of ZrTiO4 Thin Films Prepared by Reactive DC Magnetron Co-sputtering

Abstract

ZrTiO 4 is a small ceramic constituent material which has very good thermal and electrical properties. ZrTiO 4 thin films were deposited by reactive dc magnetron co-sputtering method. The crystal structure, surface morphology, thickness and dielectric properties were characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), FE-SEM (field emission scanning electron microscope), and precision impedance analyzer respectively. These films were crystallization of the orthorhombic phase (111) of ZrTiO 4. The microstructure of well-crystallized ZrTiO 4 thin films had the surface morphology was smooth with 1.695 nmrms roughness. The high dielectric constant width decreases from 129.2 to 110.6 when sputtering current increases which are higher more than that had researched because of higher energy but impedance; |Z| increases from 1.97 to 2.47 kΩ. These results are consistent with the RMS roughness results, which are the RMS roughness decrease with increasing sputtering current.