Straddle-gate transistor: changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect

High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities

“…In this configuration, regions A serve as extended source and drain, and our device operates in a fashion similar to a conventional MOSFET through bulk-switching in region B. We note that for Si MOSFETs, transistors with electrically-induced source/drain regions have been fabricated by using additional side gates [30], and our dual-gate structure is reminiscent of the straddle-gate Si MOSFETs demonstrated by Tiwari et al [31].…”

Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET

“…Recently, in order to meet scaling demands, electrically variable shallow junction (EJ) MOSFETs and straddle-gate MOSFETs have been fabricated [22][23][24]. Since, the S/D regions are electrically induced, the junction is extremely shallow and it effectively reduces SCEs.…”

“…Since additional steps are required to fabricate the DMG structure from SMG, the same additional steps can be carried out to fabricate TMG out of DMG. The device proposed has not yet been fabricated, but (a) dual material gate HFET with two contacting materials in the gate [16], (b) oxide stack in a MOSFET [30], (c) Epi MOSFETs [13][14][15] and (d) EJ MOSFETs with three gate regions [22][23][24] have already been fabricated, and so, in light of this, the feasibility of fabricating such a structure (i.e., TRIMGAS Epi) seems possible.…”