Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET

Abstract

A new device architecture triple material gate oxide stack (TRIMGAS) epitaxial channel (Epi) MOSFET for reduced short channel effects (SCEs) at short gate lengths is proposed. The structure has a gate electrode consisting of three different materials, an oxide stack having high-K material on top of an SiO 2 layer and an epitaxial channel profile. A two-dimensional analytical threshold voltage and drain current model has been presented. An analysis of subthreshold slope and I-V characteristics has been done for the first time including all regions of operation. The model proposed is capable of modelling various other MOSFET structures: (a) dual material gate stack (DUMGAS), (b) single material gate stack (SIMGAS), (c) straddle-gate/ EJ/side-gate MOSFET oxide stack, (d) dual/hetero material gate (DMG/HMG), (e) single material gate (SMG) and (f) triple material gate (TMG), all with and without an epitaxial channel profile. A 2D device simulator, ATLAS, is used over a wide range of parameters and bias conditions to validate the analytical results.