High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities

Inkjet Printed Single‐Walled Carbon Nanotube Based Ambipolar and Unipolar Transistors for High‐Performance Complementary Logic Circuits

“…[9][10][11][12][13][14] Alternative carbon based and solution-processable semiconductors, such as single-walled carbon nanotubes (SWCNT), [ 15 ] are being also strongly explored because they offer a path towards high performance in terms of charge mobility and electronic bandwidth of printed FETs thanks to their intrinsic electronic properties. [16][17][18] Printed networks of semiconducting SWCNT [ 19 ] can achieve the goal if current challenges in terms of uniform printability and of high purity with controlled chirality of SWCNT formulations are overcome.…”

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

“…This has the important implication that devices with rather thick t ox can still exhibit steep subthreshold swings if the body is scaled to an extremely small thickness, such as in a nanowire or nanotube. In fact, carbon nanotube FETs-a special case of UTB SB-MOSFETs-show an excellent OFF-state even for a rather thick t ox (see, e.g., [11]). However, for small bodies and larger gate oxide thicknesses, S exhibits a strong dependence on t si and thus small body thickness fluctuations lead to a significant variation δS = (dS/dt si ) ∝ t ox /t si of the subthreshold swing.…”

Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors

“…[3][4][5][6] Due to the small lateral extent in the nanometer range, electronic transport through such nanowires is one dimensional with only a few or even a single transverse mode participating in the current. As a result, increasingly less electrons are involved in the switching of a nanowire transistor.…”