Storage and Erasure of Optical Information in Pt-PZT-SnO₂Thin Film Structures

Abstract

We have studied the effect of optical radiation on the conductivity of a thin film field effect transistor based on a Si-SiO 2 -Pt-PZT-SnO 2−x -Pt multilayer structure. Within an admissible radiation dose, the conducting channel possesses a persistent photoconductivity, with an optical data storage time of at least 10 5 s. Effective channel impedance control by an electric field applied to the thin-film ferroelectric-semiconductor structures is demonstrated. The persistent photoconductivity in the studied multilayer structure may be quenched by only an increase of temperature, for example, using heating by an alternating switching electrical field.

Radiation effects in piezoelectric sensor

“…It is presumed that throughout PZT growth excessive Pb is expelled to grain boundaries where lead oxide is formed (Eg-l.? eV) [8]. At that it is grain boundaries that are of significant importance for PZT ionization conductivity.…”

UV-INDUCED CHANGES OF THE POLARIZATION PROFILE OF Pb(Zr,Ti)O3 THIN FILMS

“…Photocarrier storage at ferroelectric-semiconductor interfaces is also a promising operational principle of UV dosimeters and re-programmable storage devices operating without an additional power supply [11]. In this case, the stored information is erased by the combined action of polarization switching and self-heating caused by ac currents [12].…”