STM observations of GaAs(110) showing the top and bottom zig-zag rows of the surface

Raad, de Gj Gijs; Bruls, DM Dominique; Koenraad, PM Paul

doi:10.1103/physrevb.64.075314

Cited by 14 publications

(9 citation statements)

References 30 publications

(55 reference statements)

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“…Before we take the line profiles, we apply the usual ''tilt'' background correction to the image, followed by the ''line-by-line tilt correction'' described in Ref. 12. We then calculate the average height along both profiles ͑H Ϫ110 and H 001 ͒.…”

Section: Methodsmentioning

confidence: 99%

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

2002

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Atomically resolved, voltage-dependent scanning tunneling microscopy ͑STM͒ images of GaAs͑110͒ are compared to the results of a one-dimensional model used to calculate the amount of tip-induced band bending for a tunneling junction between a metal and a semiconductor. The voltage-dependent changes in the morphology of the atomic lattice are caused by the four surface states of the GaAs͑110͒ surface contributing in varying relative amounts to the total tunneling current. Tip-induced band bending determines which of these states contributes to the total tunneling current at a given bias voltage, and thus has a profound influence on the voltage-dependent STM-images. It is shown that certain voltage regions exist, for which none of the surface states present at the GaAs͑110͒ surface can contribute to the tunneling current. For these voltages, tunneling occurs between the tip and bulk states of the sample through a surface depletion layer several nm wide. Nevertheless, we observe atomic, surface like corrugation for these circumstances.

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Section: Methodsmentioning

confidence: 99%

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

2002

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“…The following parameters are used in the calculations: The tip sample separation is approximated to 7 Å. This value is derived from previous works concerning the voltage dependent movement of the tip in z(V)-measurements 31 and the z-movement of the tip, when a jump to contact occurs 32,33 . As GaAs parameters the low temperature band gap of 1.52eV and electron affinity 4.1eV are used 34 .…”

Section: Linking Energy Scales In the Sample With The Applied Bias Vo...mentioning

confidence: 99%

Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy ofp-doped GaAs

et al. 2007

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The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in Scanning tunneling microscopy images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter -the STM tip's work function -is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.PACS numbers: 71.55. Eq, 73.40.GK

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“…It has been widely used for nanostructured III-V materials. [7][8][9] However, in the case of II-VI semiconductors, X-STM has almost never been applied. Limited studies have been done of which the observation of ZnSe/ BeTe multiple quantum wells 10,11 ͑QWs͒ and a study of wurtzite II-VI compounds 12 are the most important ones.…”

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Cross-sectional scanning tunneling microscopy study on II–VI multilayer structures

Wierts

Ulloa

Çelebi

et al. 2007

Applied Physics Letters

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STM observations of GaAs(110) showing the top and bottom zig-zag rows of the surface

Cited by 14 publications

References 30 publications

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces

Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy ofp-doped GaAs

Cross-sectional scanning tunneling microscopy study on II–VI multilayer structures

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