Step structures and dislocations of SiC single crystals grown by modified Lely method

Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

“…4(b3), marked by the blue circles). Similar morphology was also observed by other researchers [26,27] when they used molten KOH to corrode the 6H-SiC single crystal. They suggested that the large hexagonal etching pits resulting from the dissolution of SiC should preferentially form on the {0 0 0 1} faces at the positions where the screw dislocations located inside the crystal.…”

The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs

“…At higher growth temperatures, the surface has a rough crosshatch morphology with an RMS roughness of 4100 nm as observed in large area AFM scans (not shown). The growth morphology at 500 1C appears, in regions, similar to the spiral growth mode associated with screw-dislocations often observed in other systems, such as SiC[35] and previously observed for the InAs/GaAs MOVPE growth at 530 1C[7].…”

AFM investigation of interface step structures on PVT-grown (0 0 0 1)Si 6H–SiC crystals

“…AFM investigations on SiC surfaces were published in Ref. [4,5] where the authors investigated different polytypes (4H, 6H) and polarities (C, Si) mainly in the central faceted area. In the present work, we have investigated the entire growth surface of the (0 0 0 1)Si-face of 6H-SiC crystals focusing on the effect of the thermal field on interface step structures and crystal quality.…”