The in-situ doping of aluminum and nitrogen in migration enhanced embedded epitaxy (ME3) is investigated with the aim to apply it to the realization and fabrication of all-epitaxial, normally-off 4H-SiC JFET devices. This ME3 process consists of the epitaxial growth of an n-doped channel and a highly p-doped top gate in narrow trenches. We found that the nitrogen doping in the n-channel (a-face) is a factor 1.5 higher than layers grown with the same process on Si-face wafers. Due to the low C/Si ratio and the low silane flow rate used in the ME3 process, the growth of the p-doped top gate needs high flow rates of the aluminum precursor trimethylaluminum for several hours, which contaminates the CVD reactor and causes aluminum memory effects. These aluminum memory effects can be reduced by an extra high temperature bake-out run.
The migration enhanced embedded epitaxy (ME3) mechanism and 2D dopant distribution of the embedded trench region is investigated with the aim to realize the all-epitaxial, normally-off junction field effect transistor (JFET). We found that the embedded growth consists of two main components. First one is the direct supply without gas scattering and the other one is the surface migration supply via the trench opening edge, which dominate the ME3 process. An inhomogeneous 2D distribution of Aluminum (Al) concentration was revealed for the first time in the 4H-SiC embedded trench regions by the combined analysis of secondary ion mass spectrometry (SIMS) and scanning spreading resistance microscopy (SSRM) results. The maximum variation of Al concentration in the trench is estimated to be about 4-times, which suggests that the Al concentration is highest for the (0001) plane and lowest for the trench corner (1-10x) plane. Al concentration in the (1-100) plane, which determines the JFET p-gate doping level is 1.5-times lower than (0001) plane for trench region fabricated on Si-face wafers.
The correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- Raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11-20) faces by four point bending test, under measuring the frequency shift in micro-Raman spectroscopy. The results revealed that the linearity coefficients between stress and Raman shift were -1.96 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, -2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and -2.70 cm-1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. Determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-Raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.
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