Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

Shen, Ping; Wang, Yi; Ren, Lu; Shixin, Li; Liu, Yuhua; Jiang, Qi‐Chuan

doi:10.1016/j.apsusc.2015.07.164

Cited by 54 publications

(9 citation statements)

References 38 publications

(56 reference statements)

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“…The most common method for testing the wettability of aluminum alloy melts and SiCp is a dispensed sessile drop method, [ 31 ] which measures the wetting angle based on a photograph at the moment of contact between the dripping metal melt and a substrate made of pressed SiCp. [ 32 ] Actually, a flat contact surface between aluminum melt and the SiCp is substantially different from the concave–convex contact surface between aluminum melt and the SiCp during the infiltration process.…”

Section: Introductionmentioning

confidence: 99%

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

et al. 2023

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A new cooling crystallization method is applied to plate copper on SiCp. Cu(NO3)2·3H2O is crystallized on SiCp by decreasing the solution temperature, and is heat‐treated to obtain CuO coating which is finally reduced to copper coating. Based on the optimizing of SiCp content and CuO reduction temperature, the effects of copper plating on SiCp on the spreading and infiltration of AlSi12 alloy melt are studied. The results show that the optimum coating effect is achieved when the SiCp content is 11.63% and the reduction temperature of CuO is 475 °C. The spreading area of AlSi12 alloy melt on the 15 μm copper‐coated SiCp increases by 53.27% compared to the uncoated SiCp when holds at 950 °C for 20 min, indicating that copper plating has a significant improvement on the wettability of AlSi12 melt and SiCp. Additionally, infiltration preparation of copper‐plated SiCp/Al alloy composites is achieved at a pressure of 0.3 MPa, but not under pressureless conditions. The main reason for this is the granular Cu on SiCp cannot form a complete Cu film. Therefore, the formation of complete Cu films on SiCp is presumed to be an important development direction for solving the problem of infiltration preparing ultrathick SiCp/Al composites.

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Section: Introductionmentioning

confidence: 99%

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

et al. 2023

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“…In experiments, many researchers have studied the wetting and bonding behavior of Al/SiC interfaces [ 6 , 7 ]. By means of the static drop technique in high vacuum, Laurent et al have researched the wetting kinetics of Al/SiC interfaces [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

Effects of Transition Element Additions on the Interfacial Interaction and Electronic Structure of Al(111)/6H-SiC(0001) Interface: A First-Principles Study

Chen

Xie

2021

Materials

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In this work, the effects of 20 transition element additions on the interfacial adhesion energy and electronic structure of Al(111)/6H-SiC(0001) interfaces have been studied by the first-principles method. For pristine Al(111)/6H-SiC(0001) interfaces, both Si-terminated and C-terminated interfaces have covalent bond characteristics. The C-terminated interface has higher binding energy, which is mainly due to the stronger covalent bond formed by the larger charge transfer between C and Al. The results show that the introduction of many transition elements, such as 3d transitional group Mn, Fe, Co, Ni, Cu, Zn and 4d transitional group Tc, Ru, Rh, Pd, Ag, can improve the interfacial adhesion energy of the Si-terminated Al(111)/6H-SiC(0001) interface. However, for the C-terminated Al(111)/6H-SiC(0001) interface, only the addition of Co element can improve the interfacial adhesion energy. Bader charge analysis shows that the increase of interfacial binding energy is mainly attributed to more charge transfer.

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“…It is extensively used in aerospace applications, electronic integrated circuits, and packaging materials [1][2][3][4][5][6][7][8]. The performance of the Al matrix composite prepared by adding SiC to the aluminum matrix is similar to the performance of the second phase reinforcement and aluminum alloy matrix [9], which can meet the practical application requirements of high-strength Al alloys. The preparation of Al-SiC composite materials uses abundant raw materials and is inexpensive, with a low processing cost.…”

Section: Introductionmentioning

confidence: 99%

Effect of CeO2 on Corrosion Resistance of High-Current Pulsed Electron Beam Treated Pressureless Sintering Al-20SiC Composites

Sun

Gao

et al. 2021

Coatings

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In this paper, the effect of rare earth Ce on the corrosion resistance of Al-20SiC composites treated with high-current pulsed electron beams is investigated, and the corresponding corrosion mechanism is proposed. The scanning electron microscope (SEM) results show that cracks arise on the surface of Al-20SiC composites prepared by pressureless sintering. After electron beam treatment, the pores on the surface are reduced because of the filling of Al liquid. After adding CeO2 to Al-20SiC composites, the wettability between Al and SiC phases is improved, thus realizing metallurgical bonding of the two phases, and microcracks generated after HCPEB treatment are significantly eliminated. Glancing X-ray diffraction (GIXRD) results show that after electron beam treatment, aluminum grains tend to grow more favorably with the stable and dense crystal plane of Al(111), thus improving corrosion resistance. The electrochemical test results show that the corrosion current density decreases by one order of magnitude with increase in the number of pulses because of rare earth Ce compared to the initial Al-20SiC composite specimens, indicating that the corrosion resistance of the Al-20SiC-0.3CeO2 composite is improved. This is because rare earth not only eliminates microcracks, but also changes the type of corrosion from localized to uniform, thus improving corrosion resistance. The Al-based composite material modified by electron beam and rare earth has many potential applications and development prospects.

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Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

Cited by 54 publications

References 38 publications

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

Copper Plating on SiCp by Cooling Crystallization and Its Effects on the Spreading and Infiltration of AlSi12 Alloy Melt

Effects of Transition Element Additions on the Interfacial Interaction and Electronic Structure of Al(111)/6H-SiC(0001) Interface: A First-Principles Study

Effect of CeO2 on Corrosion Resistance of High-Current Pulsed Electron Beam Treated Pressureless Sintering Al-20SiC Composites

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