2002
DOI: 10.1016/s0924-0136(02)00571-x
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State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer

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Cited by 21 publications
(15 citation statements)
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“…Most wafer grinding systems utilize the rotational in-feed grinding method to keep the contact area unchanged and thereby deliver a stable grinding performance throughout the grinding process (Zhou, et al, 2002). During grinding, the Si wafer was mounted on a porous ceramic vacuum chuck, and sufficient purified water was applied to the grinding zone as coolant.…”
Section: Experimental Description and Resultsmentioning
confidence: 99%
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“…Most wafer grinding systems utilize the rotational in-feed grinding method to keep the contact area unchanged and thereby deliver a stable grinding performance throughout the grinding process (Zhou, et al, 2002). During grinding, the Si wafer was mounted on a porous ceramic vacuum chuck, and sufficient purified water was applied to the grinding zone as coolant.…”
Section: Experimental Description and Resultsmentioning
confidence: 99%
“…A kinematical analysis is useful to address the behavior of each grain in wafer surface generation (Zhou, et al, 2002, 2003, Chen and Hsu, 2006, 2008. The 3D model of rotational in-feed grinding method is shown in Fig.…”
Section: Kinematical Analyses 31 3d Cutting Path and Resultant Wafermentioning
confidence: 99%
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“…The effect of this has been modelled and simulated to predict surface roughnessand chip-scale parameters [7,8,9] while, experimentally, local normal forces have been measured by integrating a miniature piezoelectric force in the force flux of a single grinding segment [9,10]. Varying levels of surface roughness and subsurface depth of damage have also been confirmed experimentally [9,11] while variations in TTV and planarity are also possible on machines of non-infinite stiffness whereelastic deflections are present at the end of the machine cycle [9,12].…”
Section: Introductionmentioning
confidence: 99%
“…Zhou et al [8] studied an advanced manufacturing method for silicon wafers, using fixed abrasive instead of free slurry, to provide excellent surface roughness and global flatness. The denser cutting path contributes to surface roughness improvement, but an excessive cutting path density often leads to sever burn marks on the wafer surface.…”
Section: Introductionmentioning
confidence: 99%