State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Flade, T.; Jurisch, M.; Kleinwechter, A.; Köhler, Andreas; Kretzer, U.; Prause, J.; Reinhold, Th.; Weinert, B.

doi:10.1016/s0022-0248(98)01072-0

Cited by 18 publications

(7 citation statements)

References 9 publications

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“…The so-called Freiberg model gives a complete list of the possible distribution of all constituents on the three sublattices for semi-insulating GaAs as it is fabricated at Freiberg Compound Materials (FCM, Flade et al 1999). The notion Freiberg model refers, in particular, to the fact that Ga atoms exclusively live on the sublattice a (M. Jurisch 2002, personal communication); see also Rudolph (2003).…”

Section: Constitution Of the Three Phases Of Gaas (A ) Chemical Constmentioning

confidence: 99%

On the modelling of semi-insulating GaAs including surface tension and bulk stresses

Dreyer

Duderstadt

2008

Proc. R. Soc. A.

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The necessary heat treatment of single-crystal semi-insulating gallium arsenide (GaAs), which is deployed in micro-and optoelectronic devices, generates undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid-solid interface and deviatoric stresses in the solid.The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular, the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law, which gives an appropriate stress-strain relation for many solids in the small-strain regime. We establish criteria that allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law.The main objectives of this study are the following: (i) we develop a thermomechanical model that describes diffusion and interface motions, which are both strongly influenced by surface tension effects and deviatoric stresses, (ii) we give an overview and outlook on problems that can be posed and solved within the framework of the model, and (iii) we calculate non-standard phase diagrams for GaAs above 1059 K, i.e. those that take into account surface tension and deviatoric stresses, and we compare the results with classical phase diagrams without these phenomena.

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Section: Constitution Of the Three Phases Of Gaas (A ) Chemical Constmentioning

confidence: 99%

On the modelling of semi-insulating GaAs including surface tension and bulk stresses

Dreyer

Duderstadt

2008

Proc. R. Soc. A.

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“…The FCM state-of-the-art high pressure LECpuller [11] is designed for crucibles up to 16 00 in diameter und charges up to 50 kg with a heater setup consisting of three independently controllable graphite heaters. The central main heater is used for diameter control.…”

Section: Crystal Lengthmentioning

confidence: 99%

“…Upon request the furnace can be replaced by a VGF core (see below) leaving other components unchanged. SI GaAs single crystals 150 mm + from 30 to 45 kg melt size are commercially grown [11,12] from which up to 300 wafers can be produced. The capability of the LEC pullers for growing 200 mm + GaAs single crystals has been reported recently [13,14].…”

Section: Crystal Lengthmentioning

confidence: 99%

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Jurisch

Börner

Bünger

et al. 2005

Journal of Crystal Growth

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“…For GaAs, there is currently (in 2003) a general movement to the growth of 150 mm diameter crystals [3,31,32], and Seidl [33] has most recently reported the growth of 200 mm SI LEC single crystals of a quality comparable with those of 150 mm diameter. There is also intense development work to increase the diameter of InP LEC crystals.…”

Section: Article In Pressmentioning

confidence: 99%

Progress in the melt growth of III–V compounds

Mullin

2004

Journal of Crystal Growth

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State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals

Cited by 18 publications

References 9 publications

On the modelling of semi-insulating GaAs including surface tension and bulk stresses

On the modelling of semi-insulating GaAs including surface tension and bulk stresses

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Progress in the melt growth of III–V compounds

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