LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Jurisch, M.; Börner, F.; Bünger, Th.; Eichler, S.; Flade, T.; Kretzer, U.; Köhler, Andreas; Stenzenberger, J.; Weinert, B.

doi:10.1016/j.jcrysgro.2004.10.092

Cited by 55 publications

(35 citation statements)

References 16 publications

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“…Despite of markedly technological success during the last decade, like production maturity of 150 mm diameter by the liquid encapsulated Czochralski (LEC) and vertical gradient freeze (VGF) growth [1], dislocation-free material is still not available. The minimum dislocation density in semiinsulating (SI), i.e.…”

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confidence: 99%

Studies on dislocation patterning in 6‐inch GaAs crystals

Rudolph

Frank‐Rotsch

Juda

et al. 2007

Phys. Status Solidi (c)

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The present paper investigates the correlations between the cell dimension d of characteristic dislocation cell patterns and acting thermo-elastic stress τ at the growth of 6-inch semi-insulating VCz and VGF GaAs crystals. Whereas the dislocation density and cells are analysed experimentally the history of the elastic stress, responsible for the cell formation, is obtained by global numeric calculation. At stresses below 1 MPa diffusion-controlled creep is the dominant mechanism of dislocation motion. Different d(τ) -proportionalities in VCz and VGF crystals are determined. This is due to the varying thermal conditions and stay times of the growing crystal at high temperatures.

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confidence: 99%

Studies on dislocation patterning in 6‐inch GaAs crystals

Rudolph

Frank‐Rotsch

Juda

et al. 2007

Phys. Status Solidi (c)

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“…Carbon as a common substitutional acceptor (C As ) is used in semi-insulating GaAs crystals to stabilize the Fermi level near the mid gap position 1 . Carbon is also widely employed to grow highly p-type doped epitaxial layers 2,3 .…”

Section: Introductionmentioning

confidence: 99%

Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations

Kuenneth

Kölbl

Wagner

et al. 2018

Journal of Applied Physics

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Molecular-like carbon-nitrogen complexes in GaAs are investigated both experimentally and theoretically. Two characteristic high-frequency stretching modes at 1973 and 2060 cm −1 , detected by Fourier transform infrared absorption (FTIR) spectroscopy, appear in carbon-and nitrogen-implanted and annealed layers. From isotopic substitution it is deduced that the chemical composition of the underlying complexes is CN 2 and C 2 N, respectively. Piezospectroscopic FTIR measurements reveal that both centers have tetragonal symmetry. For density functional theory (DFT) calculations linear entities are substituted for the As anion, with the axis oriented along the 1 0 0 direction, in accordance with the experimentally ascertained symmetry. The DFT calculations support the stability of linear N-C-N and C-C-N complexes in the GaAs host crystal in the charge states ranging from +3 to −3. The valence bonds of the complexes are analyzed using molecularlike orbitals from DFT. It turns out that internal bonds and bonds to the lattice are essentially independent of the charge state. The calculated vibrational mode frequencies are close to the experimental values and reproduce precisely the isotopic mass splitting from FTIR experiments. Finally, the formation energies show that under thermodynamic equilibrium CN 2 is more stable than C 2 N.

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“…The LEC growth process generates some new dynamics, which requires better understanding and controlling. Therefore, it has attracted great attention (Walker et al 2002;Morton et al 2003;Jurisch et al 2005).…”

Section: Introductionmentioning

confidence: 99%

Asymptotic Solution of Thermocapillary Convection in a Differentially Heated Thin Annular Two-Layer Pool

Wang

et al. 2009

Microgravity Sci. Technol.

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The steady laminar two-dimensional thermocapillary convection of two immiscible liquid layers in a thin annular pool with one free surface, one liquid/liquid interface subjected to a radial temperature gradient was investigated using asymptotical analysis. The pool is heated from the inner cylindrical wall and cooled at the outer wall. Bottom and top surfaces are adiabatic. The asymptotic solution is obtained in the core region in the limit as the aspect ratio, which is defined as the ratio of the lower layer thickness to the gap width, trends to zero. The numerical experiments are also carried out to compare with the asymptotic solution of the steady two-dimensional thermocapillary convection. The results indicate that the expressions of velocity and temperature fields in the core region are valid in the limit of the small aspect ratio.

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LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Cited by 55 publications

References 16 publications

Studies on dislocation patterning in 6‐inch GaAs crystals

Studies on dislocation patterning in 6‐inch GaAs crystals

Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations

Asymptotic Solution of Thermocapillary Convection in a Differentially Heated Thin Annular Two-Layer Pool

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