Progress in the melt growth of III–V compounds

Mullin, J. B.

doi:10.1016/j.jcrysgro.2003.12.036

Cited by 21 publications

(8 citation statements)

References 43 publications

(48 reference statements)

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“…Semiconductors and electrical components, such as LDs, solar cells and LEDs, were responsible for 230.7 t of In use in 2011, including 156 t of primary refined In and 76.9 t of recycled In (Goonan ; Tolcin ). Single‐crystal ingots of In compounds are produced using the same methods as for GaAs single‐crystal ingots; thus, we assume similar yields and losses (Iseler and Clark ; Mullin ; Eichler ). Of the 107.7 t that are sent for recycling, 30.8 t of In are lost.…”

Section: Substance Flow Analyses Of Scarce Metalsmentioning

confidence: 99%

Global Substance Flow Analysis of Gallium, Germanium, and Indium: Quantification of Extraction, Uses, and Dissipative Losses within their Anthropogenic Cycles

Licht¹,

Peiró²,

Villalba³

2015

J of Industrial Ecology

127

122

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SummaryThis study provides a global substance flow analysis for gallium (Ga), germanium (Ge), and indium (In) for 2011, quantifying the amount of metal lost during extraction, beneficiation/smelting/refining, manufacturing of intermediate products, and the amount embodied in end-use products. Thus far, studies illustrating their cradle to end-use life cycle on a global scale are either missing or outdated, and thus opportunities to increase their supply remain unknown and/or not quantified. The results illustrate the losses and inefficiencies stages, thereby identifying potential additional supply by process improvement, recovery, and recycling. Results show that there are significant opportunities to meet future demand of Ga and Ge by concentrating recovery efforts in the extraction and beneficiation/smelting/refining stages. Further, 1.4% Ga, 0.7% Ge, and 54% In of the theoretical available amount in the attractor ores are extracted to meet the primary refined demand in 2011. Of the 9,065 tonnes (t) of Ga embodied in the Bayer liquor (from aluminum production), only 263 t are refined. This is owing to low capacities of Ga refining, combined with a refining efficiency of 60%. Ge presents a similar case for the same reasons, in which only 43 t of Ge of the 7,636 t of Ge available from zinc leach residue are refined. Meeting future In demand, on the other hand, will require greater efforts in increasing end-of-life recycling. Process efficiencies for Ga (46%), Ge (56%), and In (78%) demonstrate further potential. We quantify the flows into use by distinguishing among dissipative and nondissipative end uses, as well as the recyclable fraction for each metal for 2011. Keywords:criticality industrial ecology metal demand scarce metals sustainable metal management waste Supporting information is available on the JIE Web site

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Section: Substance Flow Analyses Of Scarce Metalsmentioning

confidence: 99%

Global Substance Flow Analysis of Gallium, Germanium, and Indium: Quantification of Extraction, Uses, and Dissipative Losses within their Anthropogenic Cycles

Licht¹,

Peiró²,

Villalba³

2015

J of Industrial Ecology

127

122

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“…1c [11,13,24,25,37,38]. The cells are of globular type [24] and their size decreases with increasing average dislocation density [35,37].…”

Section: Gaasmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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“…Thus, the problem of dislocation cell patterning still arises in all SI GaAs crystals, as shown in Fig. 1, independently of the growth method used [1][2][3]. Typical cell dimensions between 100 and 1000 m are observed at dislocation densities in the range of 10 5 -10 4 cm −2 , respectively [4].…”

Section: Introductionmentioning

confidence: 99%