Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

Rudolph, P.; Frank‐Rotsch, Ch.; Juda, U.; Kiessling, Frank M.

doi:10.1016/j.msea.2004.12.054

Cited by 19 publications

(21 citation statements)

References 19 publications

(29 reference statements)

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“…[1,33]). Recent experimental accounts by Rudolph et al [15] and Rudolph [40] focusing on dislocation patterns display characteristic structures, which are worth being compared qualitatively to our results. In melt-grown undoped GaAs crystals dislocations generated by thermal induced strain, but in the absence of post-grown mechanical stress, were visualized on sections by the etch-pit technique as shown in Fig.…”

Section: Discussion and Comparison With Experimentssupporting

confidence: 70%

“…In melt-grown undoped GaAs crystals dislocations generated by thermal induced strain, but in the absence of post-grown mechanical stress, were visualized on sections by the etch-pit technique as shown in Fig. 6 taken from [15]. The authors were able to control stoichiometry in situ by vapor atmosphere about the melt and produced wafers of both Fig.…”

Section: Discussion and Comparison With Experimentsmentioning

confidence: 99%

“…On the other hand it is quite unlikely that for example the short range dislocation-dislocation interaction leading to junction formation does not have an influence on patterning. An important recent experimental observation by Rudolph et al [15] is that the dislocation climb can strongly change the evolving dislocation pattern morphology. By studying the dislocation structure developing during the crystal growth process of GaAs single crystals they have found that if the material composition and other experimental conditions are set up so that the dislocation climb is negligible compared to glide the dislocation configuration remains nearly random.…”

Section: Introductionmentioning

confidence: 98%

“…The work is motivated by the recent experimental results of Rudolph et al [15]. We set up a simulation method based on a model 2D system which allows us to study the collective behavior of up to 40 000 dislocations.…”

Section: Introductionmentioning

confidence: 99%

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Dislocation patterning: The role of climb in meso-scale simulations

Bakó

Groma

Györgyi

et al. 2006

Computational Materials Science

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Simulation of parallel dynamics of edge dislocations in a 2D hexagonal lattice is carried out on a large scale by means of coarse graining, in the absence of external strain. In order to study the effect of climb on dislocation pattern formation, we allowed (i) isotropic (ii) biased (iii) only glide mobility. Moreover we annihilated dislocations with opposite Burgers vectors close to each other. The main result is that in cases (i) and (ii) cellular structure emerges, for (ii) this happens after a longer transient, while (iii) gives a diffuse looking pattern, similar to former single slip plane simulations. In the course of the evolution of dislocation number and cell size they statistically well satisfy Holt's relation. The cell structure found appears to have a characteristic cell size, in contrast to fractal examples in the presence of mechanical strain. Despite the simplicity of our model, the results are consistent with the recently detected low-density dislocation patterns in melt-grown, non-post-deformed crystals.

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Section: Discussion and Comparison With Experimentssupporting

confidence: 70%

Section: Discussion and Comparison With Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Dislocation patterning: The role of climb in meso-scale simulations

Bakó

Groma

Györgyi

et al. 2006

Computational Materials Science

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“…Unfortunately, in as-grown crystals this interaction cannot be analysed directly due to the still impossibility of in-situ measurements of the acting stress during crystal growth. Therefore, we started recently the correlation between the observed mean cell dimensions and computational simulations of the resolved shear stress [5,6]. For stresses over ~ 1 MPa, acting mostly in growing LEC crystals and also in some VCz crystals, our first results showed a good agreement with the universal d ~ τ -1 dependence.…”

mentioning

confidence: 71%

Studies on dislocation patterning in 6‐inch GaAs crystals

Rudolph

Frank‐Rotsch

Juda

et al. 2007

Phys. Status Solidi (c)

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The present paper investigates the correlations between the cell dimension d of characteristic dislocation cell patterns and acting thermo-elastic stress τ at the growth of 6-inch semi-insulating VCz and VGF GaAs crystals. Whereas the dislocation density and cells are analysed experimentally the history of the elastic stress, responsible for the cell formation, is obtained by global numeric calculation. At stresses below 1 MPa diffusion-controlled creep is the dominant mechanism of dislocation motion. Different d(τ) -proportionalities in VCz and VGF crystals are determined. This is due to the varying thermal conditions and stay times of the growing crystal at high temperatures.

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Thermodynamics, Origin, and Control of Defects

Rudolph

2008

Crystal Growth Technology

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Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

Cited by 19 publications

References 19 publications

Dislocation patterning: The role of climb in meso-scale simulations

Dislocation patterning: The role of climb in meso-scale simulations

Studies on dislocation patterning in 6‐inch GaAs crystals

Thermodynamics, Origin, and Control of Defects

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