State filling in InAs quantum-dot laser structures

Osborne, S.; Blood, P.; Smowton, Peter M.; Lutti, J.; Yang, Xin; Stintz, A.; Huffaker, Diana L.; Lester, L. F.

doi:10.1109/jqe.2004.837331

Cited by 24 publications

(10 citation statements)

References 15 publications

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“…1͑b͒ resemble closely those observed in experiment. 18 Comparison of the two sets of spectra reveals significant masking of intrinsic QD properties by QD size and composition variations in present experiments. The homogeneously broadened result clearly indicates a carrierdensity dependent energy shift in the QD resonances.…”

Section: Resultsmentioning

confidence: 61%

Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots

et al. 2006

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Optical gain behavior of semiconductor quantum dots is studied within a quantum-kinetic theory, with carrier-carrier and carrier-phonon scattering treated using renormalized quasiparticle states. For inhomogeneously broadened samples, we found the excitation dependence of gain to be basically similar to quantumwell and bulk systems. However, for a high quality sample, our theory predicts the possibility of a decreasing peak gain with increasing carrier density. This anomaly can be attributed to the delicate balance between state filling and dephasing.

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Section: Resultsmentioning

confidence: 61%

Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots

et al. 2006

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“…The two most significant of these are: (1) the inhomogeneous broadening of optical spectra which is a natural consequence of self-assembly, (2) the small cross-section and short interaction length of QDs when interacting with light. These two factors lead to weak optical gain/absorption, which further results in the saturation of differential gain when QD devices are heavily injected and hence limits the nonlinear dynamics [38]. Whilst a great deal of efforts have been devoted to the growth side of QD materials to achieve higher uniformity and higher density, an alternative way to enhance the light-QD interaction and the optical nonlinearity has also been investigated by combining QDs with photonic cavities.…”

Section:  High Thermal Stabilitymentioning

confidence: 99%

Photonic switching devices based on semiconductor nano-structures

Jin¹,

Wada²

2014

J. Phys. D: Appl. Phys.

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Abstract:Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analysed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

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“…112, 121102-1 lasers, n sp is typically in the range from 1.5 to 2.5, while it is much lower in QDs owing to the smaller number of carriers required to reach the transparency. 21 Therefore, the quantity n sp Â ð1 þ a 2 H Þ should be used as the figure of merit of narrow linewidth operation rather than the sole a H -factor. 5 In this paper, we perform a systematic investigation of the spectral linewidths of InAs/InP QD lasers emitting at 1.52 lm.…”

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confidence: 99%