We study the injection locking bistability of a specially engineered two-color semiconductor FabryPérot laser. Oscillation in the uninjected primary mode leads to a bistability of single mode and two-color equilibria. With pulsed modulation of the injected power we demonstrate an all-optical memory element based on this bistability, where the uninjected primary mode is switched with 35 dB intensity contrast. Using experimental and theoretical analysis, we describe the associated bifurcation structure, which is not found in single mode systems with optical injection.
Type of publicationArticle (peer-reviewed) A detailed experimental study of antiphase dynamics in a two-mode semiconductor laser with optical injection is presented. The device is a specially designed Fabry-Pérot laser that supports two primary modes with a terahertz frequency spacing. Injection in one of the primary modes of the device leads to a rich variety of single and two-mode dynamical scenarios, which are reproduced with remarkable accuracy by a fourdimensional rate equation model. Numerical bifurcation analysis reveals the importance of torus bifurcations in mediating transitions to antiphase dynamics and of saddle node of limit-cycle bifurcations in switching of the dynamics between single-and two-mode regimes.
We describe a method of tailoring the laser spectrum of Fabry-Pérot (FP) laser diodes using a spatially varying refractive index. The cavity geometry is determined by a perturbative transmission matrix calculation of the threshold gain of the longitudinal modes and solution of the corresponding inverse problem. Single-mode FP lasers with predetermined wavelength, and twocolor FP lasers with predetermined mode spacing in the terahertz region are designed and experimentally demonstrated.
It is shown that optical synthesis of terahertz and millimeter-wave frequencies can be achieved using two-mode and mode-locked discrete mode diode lasers. These edge-emitting devices incorporate a spatially varying refractive index profile which is designed according to the spectral output desired of the laser. We first demonstrate a device which supports two primary modes simultaneously with high spectral purity. In this case sinusoidal modulation of the optical intensity at terahertz frequencies can be obtained. Cross saturation of the material gain in quantum well lasers prevents simultaneous lasing of two modes with spacings in the millimeter-wave region. We show finally that by mode-locking of devices that are designed to support a minimal set of four primary modes, we obtain a sinusoidal modulation of the optical intensity in this frequency region.
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