Photonic switching devices based on semiconductor nano-structures

Jin, Chao-Yuan; Wada, Osamu

doi:10.1088/0022-3727/47/13/133001

Cited by 41 publications

(25 citation statements)

References 153 publications

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“…Fast switching rates are currently under demand by both optical information technologies [1][2][3][4][5][6][7][8][9] and by fundamental studies that aim to manipulate light-matter interactions at femtosecond time scales [10][11][12][13]. The electronic Kerr effect inherently provides the highest possible speed given its virtually instantaneous response nature [7,[14][15][16][17][18][19][20]. Using the Kerr effect the resonance of a microcavity has been switched within a duration as short as 300 fs [17], and repeated switching has been performed at unprecedented single-channel rates beyond one THz clock rate [20].…”

Section: Introductionmentioning

confidence: 99%

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

Yüce¹,

Ctistis²,

Claudon³

et al. 2016

Opt. Express

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We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond when the nanostructure is pumped with low-energy photons. We investigate experimentally and theoretically the role of several parameters: the material backbone and its electronic bandgap, the quality factor, and the duration of the switch pulse. The magnitude of the frequency shift is reduced when the backbone of the central λ-layer has a greater electronic bandgap compared to the cavity resonance frequency and the frequency of the pump. This observation is caused by the fact that pumping with photon energies near the bandgap resonantly enhances the switched magnitude. We thus find that cavities operating in the telecom O-band are more amenable to ultrafast Kerr switching than those operating at lower frequencies, such as the C-band. Our results indicate that the large bandgap of AlGaAs/AlAs cavity allows to tune both the pump and the probe to the telecom range to perform Kerr switching without detrimental two-photon absorption. We observe that the magnitude of the resonance frequency shift decreases with increasing quality factor of the cavity. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time to within a factor two. In our experiments, we obtain a maximum shift of the cavity resonance relative to the cavity linewidth of 20%. We project that the shift of the cavity resonance can be increased twofold with a pump pulse duration that better matches the cavity storage time. We provide the essential parameter settings for different materials so that the frequency shift of the cavity resonance can be maximized using the electronic Kerr effect.

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Section: Introductionmentioning

confidence: 99%

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

Yüce¹,

Ctistis²,

Claudon³

et al. 2016

Opt. Express

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“…To summarize, along with low optical losses of the constituting materials at the conventional telecommunications wavelengths the discussed above features of the structure under consideration can find its applications in designing asymmetric and bidirectional optoelectronic and nanophotonic devices such as optical switchers, modulators, isolators which are using for the signal modulation/switching [57,58]. It is also important to note that, considering a gyrotropy of YIG, one can use the structure for an accumulation of the gyrotropy effect in a microresonator photonic cavity.…”

Section: Resultsmentioning

confidence: 99%

Four-layer nanocomposite structure as an effective optical waveguide switcher for near-IR regime

Panyaev

Dadoenkova

Rozhleys

et al. 2016

J. Phys. D: Appl. Phys.

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We present a theoretical study of the dispersion and energy properties of the eigenwaves (TEand TM-modes) in a four-layer structure composed of a magneto-optical yttrium iron garnet guiding layer on a dielectric substrate covered by a planar nanocomposite guiding multilayer. The bigyrotropic properties of yttrium-iron garnet are taken into account for obtaining the dispersion equation and an original algorithm for the guided modes identification is proposed. We demonstrated the polarization switching of TE-and TM-modes dependent on the geometrical parameters of the guiding layers. The dispersion diagrams and field profiles are used to illustrate the change of propagation properties with variation of the multilayer thickness ratio of the nanocomposite's layers. The energy flux distributions across the structure are calculated and the conditions of the optimal guiding regime are obtained. The power switching ratio in the waveguide layers of about 6 dB for the wavelength range of 100 nm is shown to be achieved.

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“…The need for ultra-fast optical switching methods is continuously growing [1,2]. Several techniques were developed in the last decades, some of which were based on the electro-optic effect [3].…”

Section: Ultra-fast Electro-optic Polarized Switchmentioning

confidence: 99%

Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device

2019

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Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. Thus, this application may serve for encryption/decryption devices since the strongest electrical responsivity is only obtained for very specific spatial polarization directions of the illumination beam. When this V-groove is sufficiently narrow, the device mainly responds to one polarization and not to the other. In such a way, electrons are generated only for one specific polarization. While the nature of the data remains electronic, the modulation control is optic, creating a photo-induced current depending on the polarization direction. This coupled device acts as a polarization modulator as well as an intensity modulator. The article focuses on the integration of several devices in different configurations of circuitry: dual, triple, and multi-element. Case studies of several adjacent devices are presented with varying critical variables, such as the V-groove aperture dimensions. Analytical models and complementary numerical analyses are presented for the future smooth integration into Complementary Metal-Oxide-Semiconductor (CMOS) technology.

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Photonic switching devices based on semiconductor nano-structures

Cited by 41 publications

References 153 publications

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

Four-layer nanocomposite structure as an effective optical waveguide switcher for near-IR regime

Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device

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