Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions

Nanoscale electronic devices based on transition metal dichalcogenides

“…Peak current density up to 2.2 MA cm −2 has been demonstrated in Esaki diodes based on InAs/GaSb heterojunctions [61]. Excellent average peak-to-valley current ratio (PVR) of 14 was achieved in Esaki diodes based on n-In 0.5 Ga 0.5 As/p-GaAs 0.5 Sb 0.5 [66]. Recently, 2D crystals have emerged as promising candidates for Esaki diodes.…”

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

“…Since TFETs operate like p-n diodes in a reverse bias, we have already proposed an easy BTBT measurement method using highly doped n+In0.5Ga0.5As(Si)/p+In0.5Ga0.5As(Be) Esaki tunnel diodes to have accurate TFET predictions [4]. In the target of decreasing the tunneling length at the heterojunction, our work was extended to the staggered band gap n+In0.5Ga0.5As(Si)/p+GaAs0.5Sb0.5(Be) system where BTBT current is boosted by a factor of 60 when compared to the homojunction system [5]. The influence of doping concentration on BTBT behavior was later investigated on similar heterojunction reaching BTBT peak current density of 1.1 mA/µm 2 [6].…”

Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements

“…6 An InGaAs/ GaAsSb heterojunction is grown on a lattice matched InP substrate with Molecular Beam Epitaxy (MBE) as described in Ref. 20. The active dopant concentrations n ¼ 3:3 Â19 19 cm À3 and p ¼ 1:1 Â 19 19 cm À3 are obtained with Hall measurements and satisfy the previously mentioned requirements for exponential BTBT current.…”

“…6) and forward bias, but only after correction for series resistance R s according to the procedure described in Ref. 20. The measured V c can be severely impacted by a high R s if the I-V curves are not corrected.…”