Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Abstract

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n#+#InAs(Si)/p#+#GaSb(Si) Esaki diode The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation El Kazzi, S. et al. "Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n#+#InAs(Si)/ p#+#GaSb(Si) Esaki diode."

Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

“…This value is similar to the one reported in Ref. 6 where the same n + InAs(Si)/p + GaSb(Si) system is grown on matched GaSb substrates (blue line). This implies that even if a highly mismatched growth is used, the same BTBT current can still be achieved.…”

“…), the main challenge of TFETs remains in controlling the defects at the channel tunneling interface. In the target to focus on the latter challenge and avoid the problem of the high-k/semiconductor, we have proposed to use III-V Esaki diodes instead of TFETs to study the influence of band alignment, 4 doping, 5 and interface stoichiometry 6 on Band to Band Tunneling (BTBT) of III-V tunneling interfaces. These works are done on lattice-matched substrates where threading dislocations coming from the channel/substrate growth are avoided.…”

Pt/SeO2 optical receivers designed for terahertz and 5G/6G technologies

“…It is also worth noting that the free carrier density in the presence of Pt plasmonic particles reaches the order of 10 19 cm −3 . This large number suggests the suitability of the Pt/SeO 2 films for fabrication of tunneling devices like light emitting diodes and Esaki diodes [30,31]. co r [32]) spectra for the glass/SeO 2 and Pt/SeO 2 films.…”

Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si

“…As a result, various broken band alignments were designed and realized by researchers, and have been applied to tunneling devices as well as optoelectronic devices with cascaded active regions [4-6, 33, 34]. However, most of the epitaxy work was performed by molecular beam epitaxy (MBE), and an 'InSb'-like interface was used by most MBE researchers to manage the strain from the 0.62% lattice mismatch between the InAs and GaSb while avoiding the 'GaAs'-like interface [35,36]. In contrast, ternary alloy interfaces have been adopted by most MOCVD researchers due to the incompatibility between the low melting point of InSb (535 • C) and the MOCVD growth temperature [37][38][39][40].…”