SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

Hartner, W.; Bosk, P.; Schindler, G.; Bachhofer, Harald; Mört, Manfred; Wendt, H.; Mikolajick, Thomas; Dehm, C.; Schroeder, Herbert; Waser, Rainer

doi:10.1007/s00339-002-1500-y

Cited by 24 publications

(9 citation statements)

References 41 publications

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“…They also have sufficiently large P r , small leakage current, simpler chemical composition, and mature ALD deposition techniques . The simpler chemical composition also eases some of the main integration challenges of classical FEs, since the thermal budget for FE phase formation is lower and the material is much less sensitive to hydrogen . On the other hand, it should be noted that the thermal budget for the crystallization process of doped HfO 2 ‐based films depends on dopants.…”

Section: Applicationsmentioning

confidence: 99%

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

et al. 2015

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The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

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Section: Applicationsmentioning

confidence: 99%

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

et al. 2015

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“…However, in addition to these promising results, the temperature stability of organic ferroelectrics in a standard CMOS flow remains questionable, and the commonly used perovskite-based ferroelectrics such as SBT and PZT [6] require special integration schemes due to the sensitivity of the materials toward hydrogen [7] and the large physical height of the gate stack.…”

Section: Introductionmentioning

confidence: 98%

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Müller

Böscke²,

Schröder

et al. 2012

IEEE Electron Device Lett.

167

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We report the fabrication of completely CMOScompatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO 2 . The program and erase operation of this metal-ferroelectric-insulatorsilicon FET (MFIS) with poly-Si/TiN/Si : HfO 2 /SiO 2 /Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 10 6 s suggest a retention of more than ten years. Index Terms-Hafnium oxide, metal-ferroelectric-insulatorsemiconductor (MFIS) FET, nonvolatile memory.

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“…Ferroelectric materials are easily degraded by hydrogen [7][8][9]. The main two effects are that H + ions can easily diffuse through the ferroelectric layer (a) forming space charge in response to the depolarization field of the domains and (b) dissociating the Bi-O bonds and reducing the SBT film [10].…”

Section: Hydrogen Sealingmentioning

confidence: 99%

Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology

Lisoni

Johnson

Goux

et al. 2004

phys. stat. sol. (c)

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PACS 81.15.Cd, 81.15.Gh, 85.50.Gk In this work recent achievements for integrating SrBi 2 Ta 2 O 9 -based non-volatile ferroelectric memories in the 0.35 µm CMOS technology are discussed. The main challenges in the development of a suitable bottom electrode compatible with the SrBi 2 Ta 2 O 9 crystallization step and the subsequent integration processing such as etching development and hydrogen sealing will be reviewed.

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SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

Cited by 24 publications

References 41 publications

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology

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SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

Cited by 24 publications

References 41 publications

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology

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Product

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Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films

Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films