SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

Abstract

Low power supply operation with leakage power reduction is the prime concern in modern nano-scale CMOS memory devices. In the present scenario, low leakage memory architecture becomes more challenging, as it has 30% of the total chip power consumption. Since, the SRAM cell is low in density and most of memory processing data remain stable during the data holding operation, the stored memory data are more affected by the leakage phenomena in the circuit while the device parameters are scaled down. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. A classification of these approaches made based on their key design and functions, such as biasing technique, power gating and multi-threshold techniques. Based on our survey, we summarize the merits and demerits and challenges of these techniques. This comprehensive study will be helpful to extend the further research for future implementations.

International Journal of Electronics and Telecommunications

“…The leakage current is one of the major factors responsible for the power consumption in the SRAM cell [11][13]. Different components of leakage currents in SRAM cells are subthreshold leakage current (Isub), gate leakage current (Igate) and junction leakage current (Ijn) [25]. Ideally, during a standby mode of SRAM cell, the unwanted flow of current is leakage current which flows in different situations consumes more power.…”

An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells

“…This paper analyzes the impact of such resistive defects on the behavior of low-power 6T-SRAM cells and evaluates the effectiveness of different test methods. This study specifically considers the effects of such defects when the backbias technique [5] is employed to reduce leakage, also evaluating the impact of current consumption on the memory cell.…”