2015
DOI: 10.1103/physrevb.91.024417
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Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction

Abstract: A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE) of GaAs contributed to the electromotive force detected with a platinum (Pt) spin detector. The electromotive force detected by the Pt spin detector had opposite polarity to that measured with a Ni80Fe20/GaAs bilayer due to the opposite direction of spin current flow, which d… Show more

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Cited by 22 publications
(23 citation statements)
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“…"#$ . We used a well-established spin diffusion model including the contribution of sample geometry for the estimation [38][39][40] . For the Pt (Ta) electrode sample, the injected spin current density !…”
mentioning
confidence: 99%
“…"#$ . We used a well-established spin diffusion model including the contribution of sample geometry for the estimation [38][39][40] . For the Pt (Ta) electrode sample, the injected spin current density !…”
mentioning
confidence: 99%
“…In this study, the τ in the pentacene films is estimated as follows: because a diffusive transport of the spin current in the pentacene films has been assumed, 9 we can use a relationship [14][15][16][17][18][19] which is expressed as,…”
mentioning
confidence: 99%
“…15,16 In this case, the conductance mismatch problem related to spin injection with spin-pumping is negligible. [17][18][19] Our sample structure and experimental set up is illustrated in Figure 1. Spin transport in pentacene is observed as follows: in palladium(Pd)/evaporated-pentacene/Ni 80 Fe 20 tri-layer samples, a spin-pump-induced pure spin current, J S , driven by ferromagnetic resonance (FMR) 15,16 of the Ni 80 Fe 20 film is generated in the pentacene layer.…”
mentioning
confidence: 99%