Spin current relaxation time in thermally evaporated pentacene films

Abstract

The spin current relaxation time (τ) in thermally evaporated pentacene films was evaluated with the spin-pump-induced spin transport properties and the charge current transport properties in pentacene films. Under an assumption of a diffusive transport of the spin current in pentacene films, the zero-field mobility and the diffusion constant of holes in pentacene films were experimentally obtained to be ~8.0× 10 -7 m 2 /Vs and ~2.0× 10 -8 m 2 /s, respectively. Using those values and the previously obtained spin diffusion length in pentacene films of 42±10 nm, the τ in pentacene films was estimated to be 150±120 ns at room temperature. This estimated τ in pentacene films is long enough for practical use as a spintronic material.

Excited‐State Dynamics of Non‐Luminescent and Luminescent π‐Radicals

“…Pentacene and its derivatives have received increasing interest as promising electronic materials for organic field‐effect transistors (OFETs) owing to their high hole‐carrier mobility. Pentacene derivatives also have the potential to serve as spin‐current transport media in spintronics devices . However, their photochemical instability in the presence of air prevents their practical applications.…”

“…[16][17][18] Pentacene and its derivatives have received increasing interest as promising electronic materials for organic field-effecttransistors (OFETs) owing to their high hole-carrier mobility.P enta-cene derivatives also have the potentialt os erve as spin-current transport media in spintronics devices. [119][120][121] However, their photochemical instability in the presence of air prevents their practical applications. Figure 17 as hows the results of the photochemical stabilityt estsc onducted on pentacene derivatives appended to p-radical, their relevantp recursors, as well as pentacene.…”

Spin-pump-induced spin transport in a thermally-evaporated pigment-red film

“…Carbon-based molecular materials for the wide possibility of spintronic applications have attracted much attention [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Those are expected as good spin transport materials originating from the weak spin-orbit interaction in the materials.…”

An energy harvesting technology controlled by ferromagnetic resonance

“…In conventional devices, the EMF generated in the FM film under FMR must be carefully removed, for example, in spin injection and spin transport experiments by the spin-pumping driven by the FMR. [5][6][7][8][9][10][11][12][13][14] Meanwhile, the EMF generation phenomenon itself in an FM film under FMR is the focus of this study, independent of the EMF origins.…”

“…( 3) correspond to the symmetry term for H due to the ISHE, and the asymmetry term for H due to the AHE and/or other effects showing the same asymmetric voltage behavior relative to H, respectively. [3][4][5][8][9][10][11][12][13][14] VSym and VAsym correspond to the coefficients of the first and second terms in the Eq. ( 3).…”