A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE) of GaAs contributed to the electromotive force detected with a platinum (Pt) spin detector. The electromotive force detected by the Pt spin detector had opposite polarity to that measured with a Ni80Fe20/GaAs bilayer due to the opposite direction of spin current flow, which demonstrates successful spin transport in the n-GaAs channel. A two-dimensional spin-diffusion model that considers the ISHE in the n-GaAs channel reveals an accurate spin diffusion length of s = 1.09 m in n-GaAs (NSi = 4×10 16 cm -3 ) at RT, which is approximately half that estimated by the conventional model.
Topological crystalline insulator SnTe is a promising material for future spintronics applications because of the strong spin-orbit coupling and surface states protected by the mirror symmetry of the crystal. In this paper, using a high-quality epitaxial ( 001)-oriented Fe/SnTe/CdTe/ZnTe heterostructure grown on GaAs, we successfully observe the inverse spin Hall effect in SnTe induced by spin pumping, which is confirmed by detailed analyses of the dependence of the electromotive force on the microwave power, magnetic-field angle, and temperature. By a rough estimation, a relatively large spin Hall angle of ∼0.01 is obtained for bulk SnTe at room temperature. This large value may be partially caused by the surface states. Our result suggests that SnTe can be used for efficient spin-charge current conversion.
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