2020
DOI: 10.35848/1882-0786/ab8347
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Spin-torque ferromagnetic resonance in electrochemically etched metallic device

Abstract: We demonstrate the quantification of spin–orbit torque efficiencies using spin-torque ferromagnetic resonance (ST-FMR) combined with electrochemical etching of a Fe/Pt bilayer. The electrochemical etching of the ST-FMR device using an ionic liquid enables to study spin–orbit effective fields, as well as an Oersted field, by varying the ferromagnetic-layer thickness. This allows to disentangle the field-like (FL) effective field and Oersted field, enabling to determine the damping-like and FL torque efficiencie… Show more

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Cited by 2 publications
(2 citation statements)
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“…Because both the DL torque efficiency, DL, and FL torque efficiency, FL, are known to have negligible dependence on tFM in the conventional understanding, 1/FMR is expected to be linearly proportional to 1/tFM. This has been used to estimate DL and FL from the linear fit of the 1/FMR-1/tFM plot [24,27,28]. However, the results in Fig.…”
Section: Theoretical Analysis Of Thickness Dependence Of Fmr Using T...mentioning
confidence: 99%
“…Because both the DL torque efficiency, DL, and FL torque efficiency, FL, are known to have negligible dependence on tFM in the conventional understanding, 1/FMR is expected to be linearly proportional to 1/tFM. This has been used to estimate DL and FL from the linear fit of the 1/FMR-1/tFM plot [24,27,28]. However, the results in Fig.…”
Section: Theoretical Analysis Of Thickness Dependence Of Fmr Using T...mentioning
confidence: 99%
“…Additionally, ionic liquid gating can be used to chemically etch down the device, enabling thickness-dependent measurements on a single device [323]. However, this process is lacking due to its irreversibility.…”
Section: Future Perspectivesmentioning
confidence: 99%