In recent years, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, large variety of crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in single-layer ferromagnetic devices with magnitudes comparable to TMD/ferromagnetic devices. Here, we perform second-harmonic Hall SOT measurements on metal-organic chemical vapor deposition (MOCVD) grown MoS2/permalloy/Al2O3 devices and compare them to a singlelayer permalloy/Al2O3 device to accurately disentangle the role of self-torques, arising from the ferromagnetic layer, from contributions from the TMD layer in these bilayers. We report a dampinglike self-torque of σDL = (−2.5 ± 0.6) × 10 5 2e (Ω • m) −1 in our single-layer permalloy/Al2O3 device, while we observe a weaker σDL with opposite sign in one MoS2/permalloy/Al2O3 device, and no significant σDL for all other MoS2/permalloy/Al2O3 devices. The opposite sign of these torques indicates a competition between the self-torque and the torque arising from the TMD layer, which would reduce the observed torque in these bilayers. In addition, we find a field-like spin-torque conductivity of σF L = (−2.8 ± 0.3) × 10 3 2e (Ω • m) −1 in a single-layer permalloy/Al2O3 device, which is comparable to control MoS2/permalloy/Al2O3 devices and previous reports on similar TMD/FM bilayers, indicating only a minor role of the MoS2 layer. Finally, we find a linear dependence of the SOT conductivity on the Hall bar leg/channel width ratio of our devices, indicating that the Hall bar dimensions are of significant importance for the reported SOT strength. Our results accentuate the importance of delicate details, like device asymmetry, Hall bar dimensions, and selftorque generation, for the correct disentanglement of the microscopic origins underlying the SOTs, essential for future energy-efficient spintronic applications.