Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects

Baranov, P. G.; Bundakova, A. P.; Borovykh, I. V.; Orlinskiĭ, S. B.; Zondervan, Rob; Schmidt, Jan

doi:10.1134/s0021364007150118

Cited by 41 publications

(18 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We exclude, as possible underlying defect structures, single carbon (C) and silicon (Si) vacancies, since the C vacancies tend to anneal out at temperatures above 500 • C [35] and the Si vacancies [8,15,16] are in the NIR. The D I -defect [36], D II -defect [37], and di-vacancies [17] show optical signatures in different spectral ranges which eliminates them as possible emitter origins.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Bright and photostable single-photon emitter in silicon carbide

Lienhard

Schröder

Mouradian

et al. 2016

Optica

View full text Add to dashboard Cite

Single photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest to realize scalable solid state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks.We report on a visible-spectrum single photon emitter in 4H-silicon carbide (SiC). The emitter is photostable at room-and low-temperature enabling photon counts per second (cps) in excess of 2×10 6 from unpatterned, bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low temperature measurements reveal a narrow zero phonon line (linewidth < 0.1 nm) that accounts for > 30 % of the total photoluminescence spectrum.

show abstract

Section: Discussionmentioning

confidence: 99%

“…It is commercially available in up to 6-inch wafers, and processes for device engineering are well developed [13]. Recently, many SPEs were reported in SiC, which were attributed to the carbon antisite-vacancy pair [14], silicon vacancies [8,15,16], and di-vacancies [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Bright and photostable single-photon emitter in silicon carbide

Lienhard

Schröder

Mouradian

et al. 2016

Optica

View full text Add to dashboard Cite

show abstract

“…SiC shares many similarities with diamond, and recent experimental evidence indicates that it may also harbor deep centers suitable for quantum computing (25)(26)(27)(28). We focus on the 4H polytype because large single crystals are readily available, and because its band gap (3.27 eV) is larger than that of 3C-SiC (2.39 eV) and 6H-SiC (3.02 eV) (29).…”

Section: Defect and Host Criteria For Nv-like Systemsmentioning

confidence: 99%

Quantum computing with defects

Weber

Koehl

Varley

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

684

583

View full text Add to dashboard Cite

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV −1 ) center stands out for its robustness-its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV −1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.semiconductor defects | spintronics | first-principles calculations A quantum computer is a device that would exploit the rules of quantum mechanics to solve certain computational problems more efficiently than allowed by Boolean logic (1). Over the past two decades, qubits have been implemented in a wide variety of materials, including atoms (2), liquids (3), and solids such as superconductors (4), semiconductors (5), and ion-doped insulators (6). Recently, the diamond nitrogen-vacancy (NV −1 ) center has emerged as a leading qubit candidate because it is an individually addressable quantum system that may be initialized, manipulated, and measured with high fidelity at room temperature (7). Interestingly, even though these successes stem largely from the defect's nature as a deep center (a point defect with highly localized electronic bound states confined to a region on the scale of a single lattice constant), no systematic effort has been made to identify other deep centers that might behave similarly. We outline the physical features that such deep centers and their hosts should exhibit and show how these criteria can be used to identify potential qubit candidates within a large class of defects structurally analogous to the diamond NV −1 . To aid in the illustration of these points, we compare density functional theory (DFT) calculations of the diamond NV −1 with those of several defects found in 4H-SiC.Searching for deep centers that behave like the diamond NV −1 is worthwhile for several reasons. From an engineering perspective, it is currently quite difficult to grow and fabricate devices from diamond. The discovery of a similar defect in a more technologically mature host material might allow for more sophisticated implementations of single-and multiqubit devices. Additionally, because deep centers and semiconductors as a whole exhibit a diverse set of physical characteristics, innovative areas of device functionality may potentially arise once the quantum properties of these...

show abstract

“…The structure of these centers, which is a fundamental problem for quantum applications, has been established using high frequency ENDOR. It has been shown that a family of silicon-vacancy related centers is a negatively charged silicon vacancy in the paramagnetic state with the spin S= 3/2, VSi − , perturbed by neutral carbon vacancy in non-paramagnetic state, VC 0 , having no covalent bond with the silicon vacancy and located adjacently to the silicon vacancy on the c crystal axis.Spin centers in Silicon Carbide (SiC) have recently been put forward as favorable candidates for a new generation quantum spintronics and sensorics, as well as quantum information processing because of the unique properties of their electron spins which can be optically polarized and read out [1][2][3][4][5][6][7][8][9][10][11]. Particularly the optical control of the single defect spin in SiC has been realized at room temperature for the first time on the well studied silicon vacancy-related center with ground spin state S= 3/2 in 4H-SiC [10].…”

mentioning

confidence: 99%

Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure

et al. 2015

View full text Add to dashboard Cite

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with S= 3/2 in rhombic 15R-SiC crystalline matrix possess unique characteristics such as optical spin alignment existing at temperatures up to 250• C. Thus the concept of optically addressable silicon vacancy related centers with half integer ground spin state is extended to the wide class of SiC rhombic polytypes. The structure of these centers, which is a fundamental problem for quantum applications, has been established using high frequency ENDOR. It has been shown that a family of silicon-vacancy related centers is a negatively charged silicon vacancy in the paramagnetic state with the spin S= 3/2, VSi − , perturbed by neutral carbon vacancy in non-paramagnetic state, VC 0 , having no covalent bond with the silicon vacancy and located adjacently to the silicon vacancy on the c crystal axis.Spin centers in Silicon Carbide (SiC) have recently been put forward as favorable candidates for a new generation quantum spintronics and sensorics, as well as quantum information processing because of the unique properties of their electron spins which can be optically polarized and read out [1][2][3][4][5][6][7][8][9][10][11]. Particularly the optical control of the single defect spin in SiC has been realized at room temperature for the first time on the well studied silicon vacancy-related center with ground spin state S= 3/2 in 4H-SiC [10]. The centers of the same origin persist also in 6H-SiC polytype and were proposed for use in quantum magnetometry [6] and room temperature operated MASERs [8]. Thus the family of the V Si related centers can be considered to form the basis of the SiC-based quantum sensors and quantum spintronics. The first solid state system on which optical detection and manipulation of the single spin has been shown is the negatively charged nitrogen-vacancy (NV − ) center in diamond. There are two main reasons why successful realization of single spin control in this system was possible. First, the NV − centers possess high optically detected magnetic resonance (ODMR) contrast and their spin alignment persists at elevated temperatures [12], thusthe polarized spin state can be readout with high fidelity even on the single spin [13]. Second, the precise atomic structure of the center has been elucidated [14][15]. This gave rise to the precise technology of NV's production in predetermined topology and concentrations [16], [17], allowing one to organize precise control of the NV's electron spin interactions with the environment. This permits to develop NV − based quantum registers [18], [19] and quantum sensors [20], [21].Therefore for the successful development of the SiC two major issues have to be addressed. On the one hand spin centers with high breakdown characteristics and high ODMR contrast must be explored, on the other hand the proper model for these spin centers must be established. We focused our efforts on these two tasks and present...

show abstract

Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects

Cited by 41 publications

References 7 publications

Bright and photostable single-photon emitter in silicon carbide

Bright and photostable single-photon emitter in silicon carbide

Quantum computing with defects

Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure

Contact Info

Product

Resources

About