Bright and photostable single-photon emitter in silicon carbide

Lienhard, Benjamin; Schröder, Tim; Mouradian, Sara; Dolde, Florian; Tran, Toan Trong; Aharonovich, Igor; Englund, Dirk

doi:10.1364/optica.3.000768

Cited by 75 publications

(101 citation statements)

References 47 publications

(51 reference statements)

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“…The low-temperature PL spectrum at the radiation point exhibits a very sharp peak at 580 nm, while a broad peak is observed around 610 nm at RT. The spectra in the inset of figure 4, derived by subtracting the background spectrum, also indicate that the broad peak at RT is red-shifted from the sharp peak at 80 K. Thus, the broad peak observed at RT is entirely composed of PSB, which is observed as the ZPL solely at 80 K. This interpretation corroborates a previous study [20] but contradicts another study [21]. This will be discussed further in a future report.…”

Section: Resultssupporting

confidence: 79%

“…It should be noted that the radiation rate t / 1 , 1 which corresponds to the radiation intensity, is roughly twice that of a diamond NV center [9]. However, the radiation intensity is generally lower than those of the 4H-SiC surface SPSs in previous reports [4,7,20], which could be attributable to the low-pressure oxidation occurring in the . Low-temperature PL spectra for a dry-oxidized sample.…”

Section: Resultsmentioning

confidence: 84%

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Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

et al. 2018

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The formation of high-brightness single-photon sources (SPSs) that emit single photons at room temperature was recently confirmed in oxygen-annealed SiC semiconductors (surface SPSs.) However, the defect structure of surface SPSs remains unclear, which makes device fabrication and property control difficult. To verify the incorporation of oxygen in surface SPSs, we fabricated SPSs using stable 18 O isotopes as oxidants. By comparing this to the case of natural oxygen annealing, we found that the SP emission spectra for the 18 O sample tended to have shorter peak wavelengths, slightly narrower peak widths, and higher intensities. Thus, it appeared that, in the case of the 18 O sample, the phonon sideband was located closer to the zero-phonon line and that oxygen was incorporated into the defects attributed to the surface SPS.

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Section: Resultssupporting

confidence: 79%

Section: Resultsmentioning

confidence: 84%

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

et al. 2018

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“…Some color centers, such as the nitrogen vacancy (NV) center in diamond [6][7][8][9][10][11], are bright enough to be investigated in the single defect limit using single-molecule microscopy techniques [12,13]. While diamond is the most celebrated host material, the last several years have witnessed the discovery of defect-based single photon sources in SiC [1,[14][15][16][17][18][19][20], ZnO [21][22][23][24][25][26], GaN [27], WSe2 [28][29][30], WS2 [31], and hexagonal boron nitride (h-BN) [32][33][34][35][36][37][38][39][40][41][42][43][44][45]. The latter three materials exist as two-dimensional monolayers and layered solids, thus offering the possibility of integrating single-photon sources with van der Waals heterostructure devices for tuning and other control.…”

mentioning

confidence: 99%

Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride

2017

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Abstract:We investigate the polarization selection rules of sharp zero-phonon lines (ZPLs) from isolated defects in hexagonal boron nitride (h-BN) and compare our findings with the predictions of a configuration coordinate model involving two electronic states. Our survey, which spans the spectral range ~550-740 nm, reveals that, in disagreement with a two-level model, the absorption and emission dipoles are often misaligned. We relate the dipole misalignment angle ( ) to the ZPL Stokes shift ( ) and find that ≈ 0° when corresponds to an allowed h-BN phonon frequency and that 0°≤ ≤ 90° when exceeds the maximum allowed h-BN phonon frequency. Consequently, a two-level configuration coordinate model succeeds at describing excitations mediated by the creation of one optical phonon but fails at describing excitations that require the creation of multiple phonons. We propose that direct excitations requiring the creation of multiple phonons are inefficient due to the low Huang-Rhys factors in In the Frank-Condon approximation, where the fast electronic rearrangement precedes the slower lattice relaxation, the transition rate from to ( * ,is proportional to where * − * are the associated Laguerre polynomials and is a measure of defect-lattice coupling called the Huang-Rhys factor. In natural units = To investigate the polarization properties of absorption, we rotate the polarization of the exciting light and monitor the total fluorescence intensity. The result of this absorption measurement is shown as the green triangles in Fig. 2b. Fixing the polarization of the exciting light to maximize the fluorescence, we determine the polarization of the emitted photons using a polarization analyzer placed in the collection path of the microscope. The result of this emission measurement is shown as the red circles in Fig. 2b. The solid lines are best fits to the data using the equationwhere 〈 〉 in each fit is the orientation of the absorption or emission dipole spectrally averaged over the collection window. As predicted by Equation 1, we find that the maxima of absorption and emission are aligned for this defect.Additionally, we have shown previously that the temperature dependence of the ZPL intensity in h-BN is well-modeled by the temperature-dependent DebyeWaller factor [33]. Thus, we conclude that the configuration coordinate model is a good description of the observed properties for the defect shown in Fig. 2.A survey of defect ZPLs that span an appreciable energy range reveals that, in contrast to the data shown in Fig. 2 For the emission measurement we fix the polarization angle of the exciting light to ( ) and record an emission spectrum for a series of positions of the polarization analyzer in the collection path. In an analogous fashion to the absorption case we obtain ( , ) and ( ) for the emitted light. For the case of emission we apply a calibration to ( ) to correct for wavelength-and polarization-dependent retardances (see Supporting Information) introduced by the collection path of the confocal microscope. To be...

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“…In addition, some transition metal color centers such as Ti [45], V [45][46][47], and Mo [48]. On the right in red, color centers in SiC observed as single-photon sources with the maximum brightness observed in cts s −1 , among this the CAV [49,50], Si C [22], oxidation [22] and annealing [51] related and unknown, 3C IR emitters [52].…”

Section: Quantum Properties Of Silicon Carbide Color Centers (Ab Initmentioning

confidence: 98%

“…It has ZPL 564-690 nm, with the largest PL intensity 800 kcts s −1 . The defect labeled 'Annealing related' in [26], of polytype 4H, is studied in [51]. It has ZPL 564-620 nm, largest PL intensity 2000 kcps s −1 , DWF 33%.…”

Section: Quantum Properties Of Silicon Carbide Color Centers (Ab Initmentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Bright and photostable single-photon emitter in silicon carbide

Cited by 75 publications

References 47 publications

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride

Silicon carbide color centers for quantum applications

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