Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 106 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin states are essential for quantum networks. Here we report on the spin and optical properties of single tin-vacancy (SnV) centers in diamond nanostructures. Through magneto-optical spectroscopy at 4 K, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, and measure electron spin lifetimes. We find that the optical transitions are consistent with the radiative lifetime limit and that the spin lifetimes are longer than for other inversion-symmetric color centers under similar conditions. These properties indicate that the SnV is a promising candidate for quantum optics and quantum networking applications.A central goal of quantum information processing is the development of quantum networks consisting of stationary, long-lived matter qubits coupled to flying photonic qubits [1,2], with applications in quantum computing, provably secure cryptography, and quantumenhanced metrology [3]. Among matter qubits, quantum emitters in wide-bandgap semiconductors [4,5] have emerged as leading systems as their coherent, spinselective optical transitions act as an interface between quantum information stored in their spin degrees of freedom and emitted photons. While most work has so far focused on the nitrogen-vacancy (NV) center in diamond [6-8], its relatively poor optical properties, including a low percentage of emission into the coherent zero-phonon-line (ZPL) [9] and large spectral diffusion when located near surfaces [10,11], have fueled the investigation of alternative emitters. These include the group-IV color centers in diamond [12], comprising the silicon-vacancy (SiV) [13][14][15][16], germanium-vacancy (GeV) [17,18], and the recently observed lead-vacancy (PbV) [19] centers. These centers have a large fraction of emission into the ZPL and a crystallographic inversion symmetry that limits spectral diffusion and inhomogeneous broadening [20,21]. Unlike the NV center, however, the electronic spin coherence of SiV and GeV centers is limited by phonon scattering to an upperlying ground-state orbital [22,23], requiring operation at dilution-refrigerator temperatures (∼ 100 mK) [24,25], or controllably induced strain [26] to achieve long coherence times.The tin-vacancy (SnV) center in diamond [27, 28] is a group-IV color center that promises favorable optical properties and long spin coherence time at readily achievable temperatures (liquid helium, ∼ 4 K). DFT calculations predict that the SnV has the same symmetry as the SiV and GeV[9], while experimental measurement of a large ground-state orbital splitting indicates that single-phonon scattering, the dominant spin dephasing mechanism of SiV and GeV centers at liquid helium temperatures, should be suppressed significantly [27]. In this work, we report spectroscopic measurements that are consistent with the conjectured electronic structure of the SnV, demonstrate that its optical...

Single photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest to realize scalable solid state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks.We report on a visible-spectrum single photon emitter in 4H-silicon carbide (SiC). The emitter is photostable at room-and low-temperature enabling photon counts per second (cps) in excess of 2×10 6 from unpatterned, bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low temperature measurements reveal a narrow zero phonon line (linewidth < 0.1 nm) that accounts for > 30 % of the total photoluminescence spectrum.

We report on quantum emission from Pb-related color centers in diamond following ion implantation and high temperature vacuum annealing. First-principles calculations predict a negatively-charged Pb-vacancy center in a split-vacancy configuration, with a zero-phonon transition around 2.3 eV. Cryogenic photoluminescence measurements performed on emitters in nanofabricated pillars reveal several transitions, including a prominent doublet near 520 nm. The splitting of this doublet, 2 THz, exceeds that reported for other group-IV centers. These observations are consistent with the PbV center, which is expected to have the combination of narrow optical transitions and stable spin states, making it a promising system for quantum network nodes.

Quantum emitters in solids are being developed for a range of quantum technologies, including quantum networks, computing, and sensing. However, a remaining challenge is the poor photon collection due to the high refractive index of most host materials. Here we overcome this limitation by introducing monolithic parabolic reflectors as an efficient geometry for broadband photon extraction from quantum emitter and experimentally demonstrate this device for the nitrogen-vacancy (NV) center in diamond. Simulations indicate a photon collection efficiency exceeding 75% across the visible spectrum and experimental devices, fabricated using a high-throughput gray scale lithography process, demonstrating a photon extraction efficiency of (41 ± 5)%. This device enables a raw experimental detection efficiency of (12 ± 1)% with fluorescence detection rates as high as (4.114 ± 0.003) × 10 counts per second (cps) from a single NV center. Enabled by our deterministic emitter localization and fabrication process, we find a high number of exceptional devices with an average count rate of (3.1 ± 0.9) × 10 cps.