Spin-dependent transport in II-VI magnetic semiconductor resonant tunneling diode

The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.

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“…The value of V 0 (B, z) is calculated as given in Ref. [21]. The Zeeman splitting and giant Zeeman splitting are, respectively, m j gμ B σB and .…”

Section: Resultsmentioning

confidence: 99%

Spin-dependent tunneling of light and heavy holes with electric and magnetic fields

2018

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“…M increases with B while it decreases when the temperature augments, it saturates in the two cases when the magnetic moments are completely aligned with the applied field. We have already investigated the magnetic field effect on current densities of spin-down and spinup, 36 formed in the well are shifted to the higher energy region. So, the corresponding current density decreases and is completely suppressed at x eff > 0 04 for B = 5 T. This fast decrease can be used to filter out the spin-down holes.…”

Section: Methodsmentioning

confidence: 99%

Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode

Mnasri¹,

S²,

Sfina³

et al. 2012

j nanosci nanotechnol

Self Cite

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Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

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“…which enables us to choose a right combination of parameters to suit our purpose. They have also shown interesting results under doping with magnetic substances, which in itself is a wide area of research that can be explored when their spin transport properties are well understood [17][18][19]. We study the effect of varying the electric field across 2-D channel and nanowire structures on spin relaxation length.…”

Section: Introductionmentioning

confidence: 99%

“…Fabrication techniques for the nanowires composed of II-VI semiconductors are also under development. Several significant advances have been made in comparing the advantages of various fabrication techniques in terms of nanowire properties [19][20][21]. Monte Carlo methods have been used by many researchers for analysing spin transport [22,23].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulation of Spin Relaxation in Nanowires and 2-D Channels of Ii–vi Semiconductors

Sharma

Nimje

Salimath

et al. 2012

SPIN

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We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II-VI semiconductors are compared at an external field of 1kV/cm to understand the predominant factors affecting spin de-phasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

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Spin-dependent transport in II-VI magnetic semiconductor resonant tunneling diode

Abstract: Magnetoluminescence in quantum dots and quantum wires of II-VI diluted magnetic semiconductors

Cited by 14 publications

References 40 publications

Spin-dependent tunneling of light and heavy holes with electric and magnetic fields

Spin-dependent tunneling of light and heavy holes with electric and magnetic fields

Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode

Monte Carlo Simulation of Spin Relaxation in Nanowires and 2-D Channels of Ii–vi Semiconductors

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