Mn-doped ZnS nanoparticles are synthesized by simple and cost effective chemical precipitation method. This diluted magnetic semiconductor is characterized by various techniques such as energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction, photoluminescence and UV-Vis spectroscopy. High purity of the sample is confirmed by energy dispersive X-ray analysis. Sub-micrometer nanocrystals are observed using scanning electron microscope. Hexagonal phase of the material is confirmed by X-ray diffraction studies, and the micro-structural properties such as grain size, strain, dislocation density and texture coefficient are examined. High value of texture coefficient indicates the well-crystalline nature of the material. The band gap, Urbach energy and steepness parameter are calculated from the absorption spectrum. The band gap is also calculated from photoluminescence. The Stokes's shift, Urbach energy and steepness parameter are reported in the case of Mn-doped ZnS for the first time.
ZnO, which has high electrochemical stability, wide band gap energy, large excitonic binding energy, intense near band excitonic emission and is non-toxic, have potential applications in all fields. This chapter reviews the structural, optical and electrical properties of undoped and doped ZnO thin films. The type of doping highly influences the structural properties such as grain size, texture coefficient and unit cell properties. The dopants of transition metal and nonmetals have unique characteristics. Moreover, mono-doping and co-doping encourage this research. The optical properties such as bandgap, charge carrier concentrations and transmissions of the films depend on the doping as well as the preparation condition of the films. The effect of doping on its properties is also discussed.
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