We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende materials at various conditions, such as, temperature, external field etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing length in nanowire is found to be greater than that in 2-D channel.*
We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II-VI semiconductors are compared at an external field of 1kV/cm to understand the predominant factors affecting spin de-phasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.
Spin relaxation process is simulated for nanowires and 2-D channels composed of IIÀVI DMS materials, particularly for Cd 1Àx Mn x Te, in our work. Our studies are focused on analyzing spin relaxation behavior at T ¼ 1 K. Variations in spin relaxation length with applied¯eld and concentration of Mn doping are calculated and plotted. E®ect of one-magnon scattering process is signi¯cant due to magnetic nature of the materials and is demonstrated in this work.
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