2012
DOI: 10.1142/s2010324712500075
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Monte Carlo Simulation of Spin Relaxation in Nanowires and 2-D Channels of Ii–vi Semiconductors

Abstract: We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxati… Show more

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