Spherical shape with fast decaying property of solvothermally grown (Y,Gd)BO3:Eu3+ nanophosphor

Choi, Sungho; Park, Byung-Yoon; Jung, Ha‐Kyun

doi:10.1016/j.jlumin.2011.03.043

Cited by 25 publications

(20 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The frequency dependent dielectric constant (e r -f) was measured for the as-prepared MIM devices with Y 2 O 3 and Gd 2 O 3 films annealed at 500 C, as shown in Fig 2a. The calculated dielectric constant of Gd 2 O 3 (Y 2 O 3 ) was in a range of 14-15 (11-15), while that of the thermally grown SiO 2 film is 4. These values are comparable to those of previously reported lanthanide thin films grown by e-beam evaporation (14)(15)(16)(17)(18). 12 Compared to the Gd 2 O 3 film, the dielectric constant of Y 2 O 3 film gradually decreases with frequency, possibly owing to remnant organic residues such as carbonyl groups induced by the PVP, which limit the polarization response time.…”

Section: Resultssupporting

confidence: 86%

“…We recently reported in detail on the growth kinetics and composition evolution of the nanophosphors using lanthanide orthoborate systems. 18 Clearly, the particle size distribution of (Y 1Àx ,Gd x )BO 3 nanoparticles is dependent upon the Gd content, as shown in the Ref. 18.…”

Section: Resultsmentioning

confidence: 86%

“…18 Clearly, the particle size distribution of (Y 1Àx ,Gd x )BO 3 nanoparticles is dependent upon the Gd content, as shown in the Ref. 18. D 50 of GdBO 3 ($ 110 nm) was determined to be substantially smaller than that of YBO 3 ($ 320 nm) by BET surface area measurements.…”

Section: Resultsmentioning

confidence: 91%

See 2 more Smart Citations

Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

Choi

Park²,

Jeong

et al. 2011

Electrochem. Solid-State Lett.

Self Cite

View full text Add to dashboard Cite

Low power-operated oxide thin film transistors (TFTs) were successfully obtained using high-k lanthanides produced via a simple solution process. Sol-gel derived high-k thin films exhibit the dielectric constant in the range of 11-15 with breakdown field as high as 3.5 MV cm À1 . Among the representative lanthinides, the Gd-based oxide acts as an effective gate insulator operating the TFTs properly. It might be induced by the uniform nucleation density followed by finer nanocrystalline grains with high Gd content.In general, high capacitance in thin film transistors (TFTs) plays an important role in increasing the capacitive coupling between the gate and active layer, leading to enhancement of the subthreshold swing and the operation voltage range. High-k lanthanides have attracted much attention as potential gate insulators to replace SiO 2 for next generation TFTs. 1,2 Offering high capacitance with low leakage current and good thermal/chemical stability with respect to various substrates, they are superior to other high capacitive materials such as HfO 2 , ZrO 2 .Recently, oxide TFTs have attracted much attention as promising large-area backplane electronics for upcoming displays, including transparent display devices currently under development. 3 The development of high-performance amorphous metal oxide semiconductors has been actively carried out to date, while there has been only limited research on the use of alternative dielectrics as gate insulators. 4-6 Much effort has been dedicated to reducing power consumption for the realization of mobile and portable applications using oxide-based TFTs with a high-k gate dielectric. Very recently, Liu et al. first investigated the characteristics of a ZnO-based TFT with a gate oxide of Gd 2 O 3 fabricated at room temperature via a pulsed laser deposition method. 7 While the aforementioned advantages using high-k materials as gate insulators are well documented, one of the major problems associated with the introduction of high-k films is a dramatic lowering of the channel mobility. The exact reason for the observed decrease has not been identified, although a number of possible scattering mechanisms have been proposed, including the following: remote phonons, fixed charges, and interfacial dipoles. 8,9 Thus, the proper selection of semiconductors and gate insulators and in-depth studies of high-k/oxide semiconductor systems are important undertakings in the quest for improving the performance of oxide TFTs.Additionally, given recent advances in vacuum-deposited oxide semiconductors, stable and complementary solution-processed alloxide devices offer a new approach. Moreover, direct patterning can be accomplished through ink-jet printing, imprinting, and roll-toroll processes without a complex photolithography process. Operational solution-processed oxide TFTs represent a vital part of this vision, and the stringent requirements on film quality and electrical characteristics make the realization of such TFTs a challenging goal and a key development milestone. 10,11 ...

show abstract

Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 86%

See 1 more Smart Citation

Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

Choi

Park²,

Jeong

et al. 2011

Electrochem. Solid-State Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The luminescence bands arising from 4f-4f transitions are sharp bands with relatively long lifetime [14][15][16]. Trivalent europium (Eu 3 þ ) activated commercial red phosphors such as YVO 4 :Eu 3 þ , Y 2 O 3 :Eu 3 þ , Y 2 O 2 S:Eu 3 þ and (Y, Gd) BO 3 :Eu 3 þ are widely used in the lighting and display devices [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and photoluminescence properties of Ba2CaZn2Si6O17:Eu3+ red phosphors for white LED applications

Annadurai¹,

Kennedy²

2016

Journal of Luminescence

View full text Add to dashboard Cite

“…doped luminescent materials are widely used as commercial red emitting phosphor materials in lightings and display devices [7,8]. Eu 3? ions are chosen as a luminescent species in many cases because Eu 3?…”

Section: Introductionmentioning

confidence: 99%

PbMoO4:Eu3+ red phosphor material for potential applications in white light emitting diodes

2014

View full text Add to dashboard Cite

Monophasic PbMoO 4 possessing tetragonal symmetry with varied Eu 3? concentrations is synthesized by solid state reaction method. The samples are characterized by X-ray diffraction, scanning election microscope, energy dispersive spectra, excitation spectra, emission spectra and decay curves. Single cubic phase of PbMoO 4 crystal is confirmed by X-ray diffraction analysis. Analysis of the photoluminescence spectra indicates that the phosphor can be excited by UV light of 386 nm, thus emitting intense red light. The ratio of red emission ( 5 D 0 ? 7 F 2 ) to orange emission ( 5 D 0 ? 7 F 1 ) is very high in present phosphor. This may be due to a lower symmetry of crystal field around Eu 3? ions. The color coordinates are calculated for PbMoO 4 :Eu 3? phosphor located in International Commission on Illumination chromaticity diagram.

show abstract

Spherical shape with fast decaying property of solvothermally grown (Y,Gd)BO3:Eu3+ nanophosphor

Cited by 25 publications

References 23 publications

Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

Synthesis and photoluminescence properties of Ba2CaZn2Si6O17:Eu3+ red phosphors for white LED applications

PbMoO4:Eu3+ red phosphor material for potential applications in white light emitting diodes

Contact Info

Product

Resources

About