Dysprosium ion (Dy ) activated Ba CaZn Si O phosphors were synthesized using high temperature solid-state reaction method. Powder X-ray diffraction (PXRD) analysis confirmed the phase formation of the as-prepared phosphors. Scanning electron microscopy (SEM) analysis disclosed an agglomeration of particles with an irregular morphology. Under 350 nm excitation, the emission spectrum of Dy ions showed bands at 481 nm (blue), 577 nm (yellow) and 674 nm (red). The influence of the Dy concentration on its emission intensity was investigated. The optimum concentration of Dy ions in the Ba CaZn Si O :Dy phosphors were found to be x = 0.06. The critical energy transfer distance was calculated. The fluorescence lifetime was also determined for Ba CaZn Si O :0.06Dy . The Commission International deI'Eclairage (CIE) chromaticity coordinates of the phosphor were calculated to be x = 0.304, y = 0.382. The activation energy for the thermal quenching was calculated to be 0.168 eV. These results indicated that the Ba CaZn Si O :Dy phosphor might be a potential candidate for near ultraviolet (NUV)-based white light-emitting diodes.
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