Spectroscopic Study of Radiofrequency Oxygen Plasma Stripping of Negative Photoresists. I. Ultraviolet Spectrum

Degenkolb, E. O.; Mogab, C. J.; Goldrick, Michael R.; Griffiths, James E.

doi:10.1366/000370276774456895

Cited by 62 publications

(26 citation statements)

References 2 publications

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“…There are numerous methods that have been used over the years in research laboratories and production environment, such as interferometry, 82 ellipsometry, [83][84][85] and optical emission spectroscopy (OES). [86][87][88][89][90] While ellipsometry is a useful research tool, it has not found much use in production. Interferometry was widely used in batch etchers, but with the transition to single wafer etchers, optical-emission monitoring became the preferred method for endpoint detection, due to its relative simplicity in terms of hardware and software implementation.…”

Section: F Endpoint Detectionmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

648

422

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The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly,the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon,silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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Section: F Endpoint Detectionmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

648

422

View full text Add to dashboard Cite

show abstract

“…1 Furthermore, OES can be used to detect the presence of impurities (e.g., air leaks or incorrect feed gases) and diagnose the reactor wall conditions. Indeed, many plasma process tools used in integrated circuit manufacturing are equipped with spectrographs to detect optical emission spectra (OES) for process monitoring.…”

Section: Introductionmentioning

confidence: 99%

Noninvasive, real-time measurements of plasma parameters via optical emission spectroscopy

Wang

Wendt

Boffard

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Absorption spectroscopy measurements of argon metastable and resonant atom density in atmospheric pressure Ar-He surface-wave plasmas using a low pressure lamp Dynamics of reactive high-power impulse magnetron sputtering discharge studied by time-and space-resolved optical emission spectroscopy and fast imaging J. Appl. Phys. 107, 043305 (2010); 10.1063/1.3305319Characterization of the behavior of chemically reactive species in a nonequilibrium inductively coupled argonhydrogen thermal plasma under pulse-modulated operation Plasma process control applications require acquisition of diagnostic data at a rate faster than the characteristic timescale of perturbations to the plasma. Diagnostics based on optical emission spectroscopy of intense emission lines permit rapid noninvasive measurements with low-resolution ($1 nm), fiber-coupled spectrographs, which are included on many plasma process tools for semiconductor processing. Here the authors report on rapid analysis of Ar emissions with such a system to obtain electron temperatures, electron densities, and metastable densities in argon and argon/mixed-gas (Ar/N 2 , Ar/O 2 , Ar/H 2 ) inductively coupled plasmas. Accuracy of the results (compared to measurements made by Langmuir probe and white-light absorption spectroscopy) are typically better than 615% with a time resolution of 0.1 s, which is more than sufficient to capture the transient behavior of many processes, limited only by the time response of the spectrograph used.

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“…Degenkolb, et al have shown that in the plasma stripping of photoresist, OH and CO were monitored using the optical emission method (14). Reichelderfer et al have also indicated the existence of carbon di-oxide, carbon monoxide, and water as the by-products in the plasma stripping of photoresist (15).…”

Section: Discussionmentioning

confidence: 99%

Reversal Etching of Chromium Film in Gas Plasma

Yamazaki

Suzuki

Uno

et al. 1979

J. Electrochem. Soc.

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The mechanism of the reaction in the reversal gas plasma etching of anti-reflective chromium photomasks was studied. Auger spectrometer and x-ray photoelectron spectrometer studies of the film revealed that WO3 is incorporated in the surface of the chromium oxide layer of the anti-reflective photomasks for the samples showing reversal etching. WO3 forms a kind of masking layer for the etching. Decomposed species of the photoresist film are found to be responsible for the etching of WOs, and carbon monoxide is proposed as the reactive species for etching the WO~ masking layer. This reversal etching was applied to the fabrication of the photomasks for MOS LSI.

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Spectroscopic Study of Radiofrequency Oxygen Plasma Stripping of Negative Photoresists. I. Ultraviolet Spectrum

Cited by 62 publications

References 2 publications

Plasma etching: Yesterday, today, and tomorrow

Plasma etching: Yesterday, today, and tomorrow

Noninvasive, real-time measurements of plasma parameters via optical emission spectroscopy

Reversal Etching of Chromium Film in Gas Plasma

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