Spectroscopic ellipsometry characterization of amorphous and crystalline TiO 2 thin films grown by atomic layer deposition at different temperatures

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

“…represented as a volume-weighted average of void and film material [24]. Here, we consider that the top layer is mixed with 50% void.…”

“…It is recommended to take 2 or 3 angles of incidence for index graded films. For the calculation of optical parameters of semiconductors, many kinds of dielectric model functions have been adopted [24,26,27]. The selection of a dielectric function is one of the most important steps in (SE) data analysis.…”

“…This method consists of the following three steps: (i) a physically possible multilayered optical model for the sample has to be constructed, (ii) optical dispersion law has to be assigned for each layer and then (iii) the model parameters has to be optimized to obtain a reliable fittings for the experimentally measured ψ and ∆ in an iterative procedure [24,25]. After several attempts of regression procedures, a single-layer model failed to fit the ellipsometric parameters well because the upper roughness layer was not considered.…”

An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

“…For both precursors, low RMS roughness values, irrespective of the scan size, of 0.36 nm (TDMAT, 1) and 0.22 nm (TDMADT, 2) were found, matching findings from other PE-ALD applications employing TDMAT with RMS roughness values of 0.2-0.31 nm. 46,47 For TDMAT, AFM revealed the formation of more distinctive hillocks with a height of about 1.6 nm while thin films deposited using TDMADT show a maximum height of only 0.95 nm for surface structures. For both precursors, the formation of single grains is observed, indicating the tendency of both compounds to agglomerate at several nucleation sites during film growth.…”

Effect of B2O3addition on optical and structural properties of TiO2as a new blocking layer for multiple dye sensitive solar cell application (DSSC)

“…Fig.9 shows a cross section realized by AFM for TiO 2 doped with 5% B 2 O 3 . [45][46] We note that n and k are considerably affected by Boron doping concentration. It was found that the film thickness corresponded with the profilometer and ellipsometry technique.…”