An efficient PE-ALD process for TiO<sub>2</sub> thin films employing a new Ti-precursor

Gebhard, Maximilian; Mitschker, Felix; Wiesing, M.; Giner, Ignacio; Torun, Boray; Arcos, Teresa de los; Awakowicz, Peter; Grundmeier, Guido; Devi, Anjana

doi:10.1039/c5tc03385c

Cited by 25 publications

(23 citation statements)

References 53 publications

(54 reference statements)

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“…High resolution element scans conrm the stoichiometry of the TiO 2 coating: deconvolution of the O 1s peak into TiO 2 (ref. 63) and SiO 2 (ref. 64) yields a O : Ti ratio of 2.3 : 1 (see ESI † for XPS data and analysis).…”

Section: Resultsmentioning

confidence: 99%

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

2017

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Section: Resultsmentioning

confidence: 99%

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

2017

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“…Detecting the ALD window in a plasma process indicates truly ALD mechanisms where surface saturation is the dominant behavior instead of gas phase reaction (CVD effect) or precursor decomposition. [ 10 ]…”

Section: Resultsmentioning

confidence: 99%

“…In applications which require precise thin‐film thickness control, delivering conformal films with precision control over composition and also a homogeneous deposition on profiled and 3D substrates at relatively low growth temperatures, ALD shows the most desirable performance among all other techniques. [ 10,11 ] A disadvantage of this deposition method is the sequential alternating pulses; it is time‐consuming to deposit films thicker than 100 nm. The presented study mainly focuses on the optimization of two processes, thermal and plasma ALD, to identify the most suitable technique to potentially combine with lithium in a sequential ALD process of TiO 2 and LiO 2 deposition to form the LTO layer.…”

Section: Introductionmentioning

confidence: 99%

Development of Rutile Titanium Oxide Thin Films as Battery Material Component Using Atomic Layer Deposition

Kia

Bönhardt

Zybell

et al. 2019

Physica Status Solidi (a)

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Herein, growth kinetics, crystal structure, and the uniformity of titanium oxide (TiO2) thin films prepared using atomic layer deposition (ALD) and plasma‐enhanced ALD (PE‐ALD) are studied. TiO2 thin films are grown using titanium tetrachloride (TiCl4), water, and oxygen precursors. Using ALD, TiO2 is grown in the temperature range of 270–310 °C thermally and in the range of 300–400 °C with PE‐ALD. In spite of the plasma process yielding better uniformity on planar structures, the optimized thermal process provides a remarkable conformal step coverage within deep trenches. In addition, the change in the crystal structure and phase transitions of TiO2 is presented herein. This is attempted at using TiO2 as a component material to grow lithium titanate (LTO) as an electrode material in solid‐state lithium‐ion batteries (LIBs). Thereby, different substrates are used. In comparison to the silicon (Si) substrate, silicon oxide (SiO2) and titanium nitride (TiN) lead to crystal phase transformation while annealing. Measurements are performed using in situ high‐temperature X‐ray diffraction (HT‐XRD). It is also shown that when TiN is sandwiched between TiO2 and the silicon substrate, the TiO2 thin film (25 nm) gradually changes from an anatase to a rutile structure.

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“…So, thermal decomposition of ligand should occur at process temperature. In order to two conflicting requirements about thermal stability of precursor, many researchers are designing a new structure precursor [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Thermal Decomposition In Situ Monitoring System of the Gas Phase Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe2)3) Based on FT-IR and QMS for Atomic Layer Deposition

Choi

Shim

et al. 2020

Nanoscale Res Lett

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We developed a newly designed system based on in situ monitoring with Fourier transform infrared (FT-IR) spectroscopy and quadrupole mass spectrometry (QMS) for understanding decomposition mechanism and byproducts of vaporized Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe 2) 3) during the move to process chamber at various temperatures because thermal decomposition products of unwanted precursors can affect process reliability. The FT-IR data show that the-CH 3 peak intensity decreases while the-CH 2and C=N peak intensities increase as the temperature is increased from 100 to 250°C. This result is attributed to decomposition of the dimethylamido ligands. Based on the FT-IR data, it can also be assumed that a new decomposition product is formation at 250°C. While in situ QMS analysis demonstrates that vaporized CpZr(NMe 2) 3 decomposes to Nethylmethanimine rather than methylmethyleneimine. The in situ monitoring with FT-IR spectroscopy and QMS provides useful information for understanding the behavior and decomposes of CpZr(NMe 2) 3 in the gas phase, which was not proven before. The study to understand the decomposition of vaporized precursor is the first attempt and can be provided as useful information for improving the reliability of a high-advanced ultra-thin film deposition process using atomic layer deposition in the future.

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An efficient PE-ALD process for TiO₂ thin films employing a new Ti-precursor

Abstract: A new Ti-precursor for low-temperature PE-ALD of titanium dioxide thin films as gas barrier layers on polymer substrates.

Cited by 25 publications

References 53 publications

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

Development of Rutile Titanium Oxide Thin Films as Battery Material Component Using Atomic Layer Deposition

Thermal Decomposition In Situ Monitoring System of the Gas Phase Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe2)3) Based on FT-IR and QMS for Atomic Layer Deposition

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An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Abstract: A new Ti-precursor for low-temperature PE-ALD of titanium dioxide thin films as gas barrier layers on polymer substrates.

Cited by 25 publications

References 53 publications

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

Ultra-high aspect ratio functional nanoporous silicon via nucleated catalysts

Development of Rutile Titanium Oxide Thin Films as Battery Material Component Using Atomic Layer Deposition

Thermal Decomposition In Situ Monitoring System of the Gas Phase Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe2)3) Based on FT-IR and QMS for Atomic Layer Deposition

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An efficient PE-ALD process for TiO₂ thin films employing a new Ti-precursor