Specific features of self-compensation in Er x Sn1 − x Se solid solutions

Charge-Transfer Processes in (SnS)1 – x(PrS)x Alloys

“…If Sn atoms in the SnS crystal lattice are partially substituted by Pr ones, the weak tendency to a reduction of the energy gap width, as the fraction of Pr atoms grows, is observed. This is a result of the ordinary growth of lattice parameters, because Sn atoms with an ionic radius of 0.67Å are substituted by lanthanide atoms with larger radii (about 1Å) [16].…”

The Influence of <i>γ</i>-Irradiation on Thermoemf and Heat Conduction of Ln<sub>0.01</sub>Sn<sub>0.99</sub>Se (Ln - Pr, Tb, Er) Monocrystals

“…The magnetic field of 11,000 oersted in strength is directed along [001] and electric current goes along [110]. Thermoemf and heat conduction were measured by stationary method in accordance with the procedure described in [12]. An isotope 60 Co with quantum energy of 1.25 MeV was used as a source.…”

Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure

“…In spite of the well-developed theory of MTIS structure, there are almost no works devoted to MTIS on Cd x Hg 1Àx Te based structure, which can be used as a detector with internal amplification. In our previous work 4) we reported some features of the electron properties of Al-Cd x Hg 1Àx Te interface. The vacuum deposition of the Al on Cd x Hg 1Àx Te surface with nature oxide layer results in formation of transition layer (more probably Al 2 O 3 or Al 2 Te 3 ) with high dielectric properties and relatively low concentration density of surface states.…”

“…The vacuum deposition of the Al on Cd x Hg 1Àx Te surface with nature oxide layer results in formation of transition layer (more probably Al 2 O 3 or Al 2 Te 3 ) with high dielectric properties and relatively low concentration density of surface states. 4,5) Realization of Al-Cd x Hg 1Àx Te based detector with spectral response controlled by bias voltage is presented in ref. 6. In the present work we present the results of experimental investigation of Al-p-Cd x Hg 1Àx Te surface-barrier structure with thin tunnel insulating gap.…”

“…( 3) is much more than one S Ã % 5 Â 10 2 cm s À1 obtained for similar structure based on n-Cd x Hg 1Àx Te in ref. 4. This can be explained by the influence of surface leakage current and tunnel current across the depletion region that always appears on the p-Cd x Hg 1Àx Te without passivation and is not taken into account in the theory used.…”