Peculiarities of Current–Voltage Characteristics of Al–p-Cd_xHg_1-xTe Tunnel Metal–Insulator–Semiconductor Structure

Abstract

The results of current–voltage (I–V) and capacity–voltage (C–V) characterization and study of kinetics of photocurrent relaxation in Al–p-Cd x Hg1-x Te structures with tunnel thin insulating layer at 80 K are presented. All observed qualitative peculiarities are well explained by a simple model, taking into account the relative contribution of recombination of the photogenerated charge carriers and their tunneling through dielectric gap at reverse bias voltage. It is established that the studied structures are suitable for IR-system applications.